08FFF Search Results

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

MX25L1635D

Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Contextual Info: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5

Contextual Info: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each

MX25U4035

Abstract: MX25U8035 PM1394 land pattern for Uson
Contextual Info: MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 1 REV. 1.0, MAR. 09, 2009 MX25U4035 MX25U8035 Contents FEATURES. 5

Contextual Info: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

AT49BV802A

Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

S 3590A

Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

M15451E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

Contextual Info: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide

lv8011

Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Contextual Info: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout

IN3064

Abstract: MX25L3225D
Contextual Info: MX25L3225D MX25L3225D DATASHEET P/N: PM1432 1 REV. 0.00, SEP. 19, 2008 MX25L3225D Contents FEATURES . 5

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

Contextual Info: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel

Contextual Info: int ! PRELIMINARY BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 28F004S5, 28F008S5, 28F016S5 Includes Commercial and Extended Temperature Specifications SmartVoltage Technology — Smart 5 Flash: 5 V Vcc and 5 V or 12 V V p p High-Performance

Contextual Info: in te l A P iM ! O M IR S K E fflA T r iK S lR ] DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ 70 ns Maximum Access Time ■ 0.43 MB/sec Write Transfer Rate

Contextual Info: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

LH28F320BFHE-PBTL80

Abstract: AP-007-SW-E
Contextual Info: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.

M3062

Abstract: TA2140 csc 2313 m3062lfgpgp u3
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid