08NOV07 Search Results

EIA-364-66

Contextual Info: Product Specification 108-2169-1 08Nov07 Rev A Metal Shell Micro Circular Connector System 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Gigabit Ethernet Threaded version of the Metal Shell Micro Circular Connector System. This system is used

microsd adapter

Contextual Info: 107-68717 Packaging Specification 08Nov07 Rev C MICRO SD ADAPTER 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MICRO SD ADAPTER. 订定 MICRO SD ADAPTER. 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

network analyzer connector 7 mm

Abstract: 7 mm connector network analyzer cat 5e cable EIA-568-B-2
Contextual Info: 501-664-1 Qualification Test Report 08Nov07 Rev A Metal Shell Micro Circular Connector System 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Metal Shell Micro Circular Connector System to determine its conformance to the requirements of Product Specification 108-2169-1 Revision A.

2060CT

Contextual Info: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: MBR F,B 735 thru MBR(F,B)760 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

MBR1550CT

Abstract: Diode MBR 1045 MBR1535
Contextual Info: MBR F,B 1535CT thru MBR(F,B)1560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

mbr304

Contextual Info: New Product MBR F,B 3035CT & MBR(F,B)3045CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

3035CT

Abstract: 3045CT MBR3035CT MBR3045CT MBRB3035CT MBRF3035CT MBRF3045CT diode 1
Contextual Info: New Product MBR F,B 3035CT & MBR(F,B)3045CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

JESD22-B102

Abstract: J-STD-002 NS8KT NS8XT
Contextual Info: NS F,B 8AT thru NS(F,B)8MT Vishay General Semiconductor Glass Passivated General Purpose Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction ITO-220AC • Low forward voltage drop • High forward surge capability 2 2 1 1 NS8xT • Solder dip 260 °C, 40 s (for TO-220AC and

JESD22-B102

Abstract: J-STD-002 MBR1635 MBR1645 mbr1645he3
Contextual Info: MBR F,B 1635 thru MBR(F,B)1660 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection ITO-220AC TO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

2035CT

Abstract: MBR2035CT 2060CT JESD22-B102 J-STD-002
Contextual Info: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: MBRF1090CT & MBRF10100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation.

NS8XT

Contextual Info: NS F,B 8AT thru NS(F,B)8MT Vishay General Semiconductor Glass Passivated General Purpose Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction ITO-220AC • Low forward voltage drop • High forward surge capability 2 2 • Solder dip 260 °C, 40 s (for TO-220AC and

mbrf*100

Contextual Info: MBRF1090CT & MBRF10100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

2535CT

Abstract: JESD22-B102D J-STD-002B MBR2535CT MBRB2545CTHE3
Contextual Info: MBR F,B 2535CT thru MBR(F,B)2560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability

A 7710

Abstract: 4026 4026 datasheet AN609 SUM85N03-06P
Contextual Info: SUM85N03-06P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 4100 MHz 4.5 VDC 4300 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC +2.0 +4.0 dBm Output Power: Supply Current: 15 mA Harmonic Suppression 2nd Harmonic : -15 dBc Pushing:

JESD22-B102D

Abstract: J-STD-002B MBR1635 MBR1645
Contextual Info: MBR F,B 1635 thru MBR(F,B)1660 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation

Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815

B1060

Contextual Info: MBR F,B 1035 thru MBR(F,B)1060 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AC FEATURES • Low power loss, high efficiency ITO-220AC • Low forward voltage drop • High forward surge capability • High frequency operation 2 2 MBR10xx • Meets MSL level 1, per J-STD-020C, LF maximum

20H100CT

Abstract: 20H100CT - 1
Contextual Info: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 3 2 1 1 2