084P3NS
Abstract: BSC084P03NS3 G
Contextual Info: BSC084P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 A • 150 °C operating temperature • 100% Avalanche tested
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IEC61249-2-21
Abstract: JESD22 JESD22-A114
Contextual Info: BSC084P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 • 150 °C operating temperature A PG-TDSON-8 • 100% Avalanche tested
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bsc084p03ns3eiec61249-2-21084p3nsejesd22+1jesd22-a114
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AIR32
Abstract: 084P3NS
Contextual Info: BSC084P03NS3E G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 8.4 mΩ ID -78.6 A • 150 °C operating temperature • 100% Avalanche tested
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084P3NS
Abstract: GSV101 IEC61249-2-21 JESD22 JESD22-A114
Contextual Info: BSC084P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in SuperSO8 R DS on ,max 8.4 mΩ • Qualified according JEDEC 1) for target applications ID -78.6 • 150 °C operating temperature A PG-TDSON-8 • 100% Avalanche tested
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bsc084p03ns3iec61249-2-21084p3nsgsv101+2jesd22jesd22-a114
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