0818 CI Search Results

NS3W183-H1

Abstract: Nichia led white 150
Contextual Info: Nichia STS-DA1-0818 <Cat.No.090615> SPECIFICATIONS FOR NICHIA CHIP TYPE WHITE MODEL : NS3W183T-H1 NICHIA CORPORATION -0- LED Nichia STS-DA1-0818 <Cat.No.090615> 1.SPECIFICATIONS 1 Absolute Maximum Ratings Item Forward Current Pulse Forward Current Allowable Reverse Current

Contextual Info: PRODUCT CHANGE NOTICE PART NUMBER: Applicable to all Sipex Tape and Reel 14LD CCN No.: 04-0818 and 16LD TSSOP packages. REVISION: Refer to Datasheet PART DESCRIPTION: Refer to Datasheet DATE: September 30,2004 Ammended: October 21, 2004 LEVEL OF CHANGE: [ ] Level I, Customer Approval.

JXBS3804

Contextual Info: Il; A B C D E *»l =•7.62m m '=" 2 .54mm = 4.7m m = 4 7 .5 m m = 1 7 . Omm ITEM CO LO U R P A R T NUM BER G REEN 183-0818 JXBS 360* YG G REEN 183-0 830 JXBS3804 YG R ED 183-0846 JXBS3804H G REEN 18 3-0 852 JXBS 3106 YG CIA y a ly a y a iic A B C D E = =

Contextual Info: TC55V1001 FI/FTI/TRI/STI/SRI-85L,-10L TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001FI/FTI/TRI/STI/SRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device

TC55V2325FF-7

Abstract: TC55V2325FF 0818 ci
Contextual Info: TO SH IB A TC55V2325FF-7 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 65,536-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V2325FF is a 2,097,152-bit synchronous pipelined burst static random access memory SRAM

Contextual Info: TOSHIBA TC55V1001 FI/FTI/TRI/STI/SRI-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001FI/FTI/TRI/STI/SRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device

Contextual Info: TOSHIBA TC554001AF/AFT/ATR-70,-85,-10,-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

Contextual Info: TO SHIBA T • C TC74HC697AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 7 m ¿ A H C m m m mut M 7 m m A P ma g T m r 7 mut m m m m r f m m m i Q 7 » A * F ma SYNCHRONOUS PRESETTABLE 4 -BIT BINARY UP/DOWN COUNTER WITH OUTPUT REGISTER MULTIPLEXED 3 -STATE OUTPUTS

Contextual Info: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: TOSHIBA TENTATIVE TC55YD1819YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1819YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: TOSHIBA TC554001AF/AFT/ATR-70,-85,-10,-701,-851,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 W O R D S X 8 BIT STATIC RAM DESCRIPTION The TC554001AF/AFT/ATR is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

Contextual Info: TO SH IBA THMD12N11 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMD51N01 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51N01B is a 67,108,864-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 16 TC59WM807BFT DRAMs on a printed circuit board.

Contextual Info: TOSHIBA TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory

Contextual Info: TO SH IBA THMD51E01 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E01B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM807BFT DRAMs on a printed circuit board.

Contextual Info: TO SH IBA THMD25E11B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25E11B is a 33,554,432-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 9 TC59WM807BFT DRAMs on a printed circuit board.

Contextual Info: TO SH IBA T H M D 2 5N 1 1 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.

2T1-2T2

Abstract: 4538B TC74HC4538AF TC74HC4538AFN TC74HC4538AFT TC74HC4538AP
Contextual Info: TOSHIBA TC74HC4538AP/AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4538AP, TC74HC4538AF, TC74HC4538AFN, TC74HC4538AFT Note The JEDEC SOP (FN) is not available in DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR Japan The TC74HC4538A is a high speed CMOS MONOSTABLE

DQSO

Abstract: TC59WM807BFT
Contextual Info: TOSHIBA THMD25N11B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.

A10C

Abstract: A15C A17C TC554001
Contextual Info: TO SH IB A TC554001 AFI/AFTI/ATRI-70V,-85V,-10V T O SH IB A M O S DIG ITA L INTEGRATED CIRCUIT SILICON GATE C M O S 524.288 W O R DS x 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as

Contextual Info: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.

TC59WM807BFT

Abstract: THMD51N01B70
Contextual Info: TOSHIBA THMD51N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51N01B is a 67,108,864-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 16 TC59WM807BFT DRAMs on a printed circuit board.

TC59WM807BFT

Abstract: 68EH
Contextual Info: TOSHIBA THMD25E11B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25E11B is a 33,554,432-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 9 TC59WM807BFT DRAMs on a printed circuit board.

Contextual Info: T O SH IB A TC74HC4066AP/AF/AFN/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4066AP, TC74HC4066AF, TC74HC4066AFN, TC74HC4066AFT Note The JEDEC SOP (FN) is not available in Japan QUAD BILATERAL SWITCH The TC74HC4066A is a high speed CMOS QUAD