080X Search Results

CBSL150

Abstract: ASI10586
Contextual Info: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C .080x45° FEATURES: A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details 20-080X Product Details Sensors & Protective Relays

gravity sensor

Abstract: float type level sensor ul1332 FLOAT SENSOR temperature sensor PIC 10VA SUS304 pic 4525 PLS-080x-xVAL
Contextual Info: Stainless Steel Levelsensors PLS-080x-xVAL L = bent VA = stainless steel 3 = 10 W, 6 = 50 W A = norm. open, B = norm. closed 080 = 80 mm dimension PLS = PIC Level Sensor Technical Data: Variants: Electrical: 3: 10W, 200VDC, 0,5A 10VA, 140VAC wire AWG 24 6: 50W, 350VDC, 0,5A

1008CT

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_L_ 1008CT-080X_L_

Contextual Info: Document 102-1 ChipInductors–1008CT Series 2520 The .055″ profile makes these parts ideal for low clearance applications. Inductance2 (nH) Percent3 Tolerance 1008CT-040X _ BC 1008CT-080X _ BC 1008CT-150X _ BC 1008CT-200X _ BC 1008CT-300X _ BC 4.7 @ 50 MHz

LCD-080X32A

Abstract: graphic LCD 2*8 lcd
Contextual Info: LCD-080X32A Vishay 80 x 32 Dots Graphic LCD FEATURES • SAMSUNG KS0713COG IC • 1/32 duty cycle • Built in booster MECHANICAL DATA ABSOLUTE MAXIMUM RATING ITEM ITEM STANDARD VALUE UNIT Module Dimension 44.0 x 30.0 mm Viewing Area 40.0 x 17.4 mm Dot Pitch

VFT300-50

Abstract: ASI10710 25020A
Contextual Info: VFT300-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: PACKAGE STYLE .400 BAL FLG D The VFT300-50 is a gold metallized N-Channel Enhancement mode MOSFET intended for use in 50 Vdc large signal applications to 175 MHz. A FULL R B .080x45° D D

300 watt mosfet amplifier

Abstract: ASI10707 VFT300-28 ms1250
Contextual Info: VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG D A FEATURES: B .080x45° • PG = 14 dB Typical at 175 MHz

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_L_ 1008CT-080X_L_

AWG22

Abstract: ul1332 10VA SUS304 SW179
Contextual Info: Edelstahl Levelsensoren PLS-080x-xVAL L = gebogen VA = Edelstahl 3 = 10 W, 6 = 50 W A = Schließer, B = Öffner 080 = 80 mm Abmessung PLS = PIC Level Sensor Technische Daten: Varianten: Elektrisch: 3: 10W, 200VDC, 0,5A 10VA, 140VAC Litze AWG24 6: 50W, 350VDC, 0,5A

Contextual Info: Document 102-1 Chip Inductors – 1008CT 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much higher Part number1 1008CT-040XJL_ 1008CT-080X_L_

ACDN301

Abstract: transistor 1345 1345 NPN DSA004098
Contextual Info: ACDN301 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ACDN301 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 8.5 dB at 100 W/860 MHz

LCD-080X32A

Abstract: graphic LCD 2*8 LCD
Contextual Info: LCD-080X32A Vishay 80 x 32 Dots Graphic LCD FEATURES • SAMSUNG KS0713COG IC • 1/32 duty cycle • Built in booster MECHANICAL DATA ABSOLUTE MAXIMUM RATING ITEM ITEM STANDARD VALUE UNIT Module Dimension 44.0 x 30.0 mm Viewing Area 40.0 x 17.4 mm Dot Pitch

HP 2400

Abstract: 1008CT
Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_B_ 1008CT-080X_B_

TPV6030

Contextual Info: TPV6030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV6030 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Common Emitter • PG = 9.5 dB at 35 W/860 MHz

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_L_ 1008CT-080X_L_

agilent marking code

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Part number1 1008CT-040X_B_ 1008CT-080X_B_ 1008CT-150X_B_ 1008CT-200X_B_ 1008CT-300X_B_ 1008CT-400X_B_ 1008CT-500X_B_ 1008CT-600X_B_

TVU150

Abstract: 20AWG ASI10652 39NF
Contextual Info: TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU150 is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .400 BAL FLG D FEATURES: .080x45° A FULL R B (4X).060 R • Common Emitter • PG = 10 dB at 150 W/860 MHz

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_L_ 1008CT-080X_L_

cbsl100

Abstract: ASI10585
Contextual Info: CBSL100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL100 is Designed for PACKAGE STYLE .400 BAL FLG C .080x45° A B FULL R FEATURES: (4X).060 R E • Input Matching Network • • Omnigold Metalization System M D C .1925 F H G N I L MAXIMUM RATINGS

ASI10586

Abstract: CBSL150
Contextual Info: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C FEATURES: .080x45° A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_B_ 1008CT-080X_B_

Contextual Info: Document 102-1 ChipInductors – 1008CTSeries 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Part 1008CT-040X _ B _ 1008CT-080X _ B _ 1008CT-150X _ B _ 1008CT-200X _ B _ 1008CT-300X _ B _ Inductance2 (nH) 4.7 @ 50 MHz 8.2 @ 50 MHz

Contextual Info: Document 102-1 Chip Inductors – 1008CT Series 2520 The 0.055″ profile makes these parts ideal for low clearance applications. Their simple construction ensures high reliability and stability, and they feature much Part number1 1008CT-040X_L_ 1008CT-080X_L_