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    07OD Search Results

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    Potter Electric Signal Company LLC

    Potter Electric Signal Company LLC ODC-59B

    Magnetic / Reed Switches 2" SPDT N/C N/O
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () ODC-59B 117
    • 1 $38.61
    • 10 $33.60
    • 100 $29.13
    • 1000 $27.50
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    ODC-59B 79
    • 1 $44.14
    • 10 $38.41
    • 100 $33.30
    • 1000 $31.44
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    Potter Electric Signal Company LLC ODC-59A-W/LBK

    Magnetic / Reed Switches 2" SPST N/O LOOP
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    Mouser Electronics () ODC-59A-W/LBK 69
    • 1 $33.13
    • 10 $28.83
    • 100 $25.00
    • 1000 $23.60
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    ODC-59A-W/LBK 29
    • 1 $37.86
    • 10 $32.95
    • 100 $28.57
    • 1000 $26.97
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    Potter Electric Signal Company LLC ODC-56B

    Magnetic / Reed Switches SPDT OVERHEAD FORM C
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    Mouser Electronics () ODC-56B 43
    • 1 $38.98
    • 10 $33.92
    • 100 $29.41
    • 1000 $27.77
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    ODC-56B 43
    • 1 $44.71
    • 10 $38.91
    • 100 $33.74
    • 1000 $31.85
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    Potter Electric Signal Company LLC ODC-59A-MINI

    Magnetic / Reed Switches SPST MINIATURE OVRHEAD DOOR CONTACT
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    Mouser Electronics () ODC-59A-MINI 15
    • 1 $38.06
    • 10 $33.12
    • 100 $28.72
    • 1000 $27.11
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    ODC-59A-MINI 15
    • 1 $33.25
    • 10 $28.93
    • 100 $25.09
    • 1000 $23.69
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    Potter Electric Signal Company LLC ODC-59A-HG

    Magnetic / Reed Switches SPST OHDC HORIZONTAL GAP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics () ODC-59A-HG 13
    • 1 $46.08
    • 10 $40.10
    • 100 $34.77
    • 1000 $34.77
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    ODC-59A-HG 3
    • 1 $40.35
    • 10 $35.11
    • 100 $30.45
    • 1000 $28.74
    • 10000 $28.74
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    07OD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMS3610S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original
    FDMS3610S PDF

    fdms3660s

    Abstract: 501B 8 P
    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original
    FDMS3660S FDMS3660S 501B 8 P PDF

    Contextual Info: FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original
    FDMS3624S PDF

    07OD

    Abstract: FDMS3624S
    Contextual Info: FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original
    FDMS3624S FDMS3624S 07OD PDF

    FDMS3660S

    Abstract: MO-240 501B
    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original
    FDMS3660S FDMS3660S MO-240 501B PDF

    abb fid 14

    Contextual Info: Prelim inary Inform ation Raytheon Electronics Semiconductor Division TM C 2490 Multistandard Digital Video Encoder Features • All-Digital Video Encoding • Internal Digital Subcarrier Synthesizer • 8-Bit Parallel CCIR-601/CCIR-656/ANSI/SM PTE 125M Input Format


    OCR Scan
    CCIR-601/CCIR-656/ANSI/SM CCIR-624/SM PTE-170M CCIR656) 4365A TMC2490 TMC2490R2C 44-Lead 2490R2C 173bG abb fid 14 PDF

    Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original
    PDF