07MAY2001 Search Results

ST M48T02

Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: LITE-ON SEMICONDUCTOR TSMB1005 thru TSMB1027 Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 50 to 270 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 300 @

Contextual Info: LITE-ON SEMICONDUCTOR TB0640L thru TB3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A

Contextual Info: THIS C D R A WI N G IS UNPUBLISHED. C O P Y R I G H T 20 BY - RELEASED ALL FOR PUBLICATION RI GHTS 20 LOC REVISIONS DIST FT R ES ERVED. LTR DESCRIPTION REVISED B2 RETAINER, MA T E R I AL : SEAL, I REQD. THERMOPLAST I C , 7 PER DATE E C O - 1 1- 0 0 5 0 2 7

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Abstract: DS1642 M48T02 M48T12 14-MAY-2001
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

DS1642

Abstract: M48T02 M48T12
Contextual Info: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds ■

TL1300M

Abstract: TL2300M TL0720
Contextual Info: LITE-ON SEMICONDUCTOR TL0640M thru TL3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES DO-15 Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A

MB91F364G

Abstract: 1f t sot-88 AEQ32091A FR30 MB91360 MB91FV360GA BGR16 code Ssm Transistor ya pK1 TRANSISTOR MBM29LV400C
Contextual Info: FUJITSU SEMICONDUCTOR FR50 32-BIT MICROCONTROLLER MB91F364G Short specification Release 4.2 05-Aug-2002 Fujitsu Ref. AEQ32091A FUJITSU MICROELECTRONICS EUROPE GmbH European Microcontroller Design Centre EMDC Am Siebenstein 6 D-63303 Dreieich-Buchschlag Fujitsu, EMDC

TL1300L

Contextual Info: LITE-ON SEMICONDUCTOR TL0640L thru TL3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES DO-15 Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @10/1000us or 150A

MB91F364G

Abstract: AEQ32091 FR30 MB91360 MB91FV360GA FPT-120P-M21
Contextual Info: FUJITSU SEMICONDUCTOR FR50 32-BIT MICROCONTROLLER MB91F364G Short specification Release 1.6 6-Nov-2001 Fujitsu Ref. AEQ32091 FUJITSU MICROELECTRONICS EUROPE GmbH European Microcontroller Design Centre EMDC Am Siebenstein 6 D-63303 Dreieich-Buchschlag Fujitsu, EMDC

GR-1089-CORE

Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB3500H
Contextual Info: LITE-ON SEMICONDUCTOR TB0640H thru TB3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @

M48T02

Abstract: STMicroelectronics
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: LITE-ON SEMICONDUCTOR TB0640M thru TB3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A

DS1642

Abstract: M48T02 M48T12 AN-924
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds