07MAR2011 Search Results
07MAR2011 Datasheets Context Search
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1N414 diode
Abstract: R11G L6591 AM-1326 tc 5070 controller half bridge l6591 C1247 IC L6562 SHORT CIRCUIT PROTECTION FOR L6562 phototransistor octocoupler
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l6591so16n1n414 dioder11g+7 | |
C547 b
Abstract: SHORT CIRCUIT PROTECTION FOR L6562 PWM controller for ZVS half-bridge L6591 BC5478 cc3041 C5478 L6563 14821 pwm smps
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l6591c547 bshort circuit protection for l6562pwm controller for zvs half-bridge+6 | |
SMC53XXB
Abstract: 5W zener diode smc5346b
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smc53xxbdo-214absmc5371bsmc5372b+8 | |
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Contextual Info: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz |
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stw82101b1101a2a1a0 | |
GIPS14K60TContextual Info: STGIPS14K60T SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 14 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes |
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stgips14k60tgips14k60t | |
STP27N3LH5
Abstract: STD27 STD27N3LH5 sc08440
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std27n3lh5stp27n3lh5stu27n3lh5o-220+2 | |
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Contextual Info: 2SD886 3A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier High Current 1Emitter 2Collector 3Base Collector 2 REF. 3 |
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2sd886o-126200ma100ma+1 | |
JC JB jtContextual Info: STW82102B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 84 dBc ■ Noise figure: – NF: 10.4 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz |
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stw82102bjc jb jt | |
TDA7491P
Abstract: 13540
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tda7491p10-wattpowersso-3613540 | |
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Contextual Info: STW82101B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +24.5 dBm – 2FRF-2FLO spurious rejection: 75 dBc ■ Noise figure: – NF: 9.5 dB ■ Conversion gain – CG: 8.5 dB ■ RF range: 695 MHz to 960 MHz |
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stw82101b | |
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Contextual Info: STW82102B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 85 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz |
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stw82102b | |
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Contextual Info: STGIPS14K60T SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 14 A, 600 V short-circuit rugged IGBT Datasheet - production data Applications • 3-phase inverters for motor drives Home appliances, such as washing machines, refrigerators, air conditioners and sewing |
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stgips14k60tsdip-25ldocid018534 | |
stm8l
Abstract: STM8l one pulse mode STM8L101 STM8L15x AN3029 STM8L cpu programming manual RLink schematic Raisonance stm8l152 STM8L1526-EVAL pm0044
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an3029stm8l101xstm8l15xstm8l15x/16x+8 | |
STW82100Contextual Info: STW82100B RF down converter with embedded integer-N synthesizer Datasheet −production data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB |
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stw82100bstw82100 | |
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Contextual Info: STGIPS14K60T SLLIMM small low-loss intelligent molded module Preliminary data Features • IPM 14 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs ■ VCE sat negative temperature coefficient |
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stgips14k60tsdip-25l | |
GIPS10K60T
Abstract: GIPS GIPS10K60
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stgips10k60tsdip-25lgips10k60tgips+1 | |
UM0991
Abstract: STM8L-DISCOVERY STM8L105C6 stm8l ST visual develop STVD user manual STM8L15x STM8L152C6T6 stm8l152 UM0970 ST visual develop (STVD) user manual
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um0991stm8l15xstm8l-discoverystm8l105c6+6 | |
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Contextual Info: STGIPS10K60T SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 10 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes |
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stgips10k60t | |
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Contextual Info: THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 20 LOC R 1G H T S R E S E RV E D. P CONNECTOR O U T L I N E ROW B -o -o -o -o -o -o Lo -o ROW A -o I ROW H |
OCR Scan |
i6aug20i028sep201107mar2011 | |
ES31B
Abstract: ES33B ES34 eS34B
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es31bes35bdo-214aamil-std-750+4 | |
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Contextual Info: STGIPS10K60T SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Applications • 3-phase inverters for motor drives Home appliances, such as washing machines, refrigerators, air conditioners and sewing |
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stgips10k60tsdip-25ldocid018533 | |
lin bus example C codes
Abstract: errata stm8 STM8S20xxx pm0044 STM8S208MB errata sheet STM8S207C6 i2c berr stm8 STM8 CPU programming manual STM8S207R8 STM8S207S6
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stm8s20xxxstm8s207xxstm8s207mbstm8s207m8+13 | |
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Contextual Info: TDA7491P 2 x 10-watt dual BTL class-D audio amplifier Features • 10 W + 10 W continuous output power: RL = 6 Ω, THD = 10% at VCC = 11 V ■ 9.5 W + 9.5 W continuous output power: RL = 8 Ω, THD = 10% at VCC = 12 V ■ Wide range single supply operation 5 V - 18 V |
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tda7491p10-wattpowersso-36 | |
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Contextual Info: STGIPS10K60T SLLIMM small low-loss intelligent molded module Preliminary data Features • IPM 10 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Short-circuit rugged IGBTs ■ VCE sat negative temperature coefficient |
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stgips10k60tsdip-25l | |