07MAR2006 Search Results

M29W128FL

Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

GD6NC

Abstract: GD6NC60H JESD97 STGD6NC60H STGD6NC60HT4
Contextual Info: STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60H 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK

diode l2 32 diode

Abstract: STGD6NC60HD
Contextual Info: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

M29W128FL

Abstract: JESD97 M29W128F M29W128FH TSOP56 a12a22
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

JESD97

Abstract: VN751PT VN751PT13TR 31-MAR-2006
Contextual Info: VN751PT High side driver Features Type RDS on Iout VCC VN751PT 60 mΩ 2.5 A 36 V PPAK • CMOS compatible input ■ Thermal shutdown ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■ Very low stand-by current

GD6NC60HD

Abstract: JESD97 STGD6NC60HD STGD6NC60HDT4
Contextual Info: STGD6NC60HD N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60HD 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode

Sawtek 856553

Abstract: QUALCOMM Reference design qualcomm temperature qualcomm ww
Contextual Info: Part Number 856553 881.5 MHz SAW Filter Data Sheet Features • • • • • • • • • • • • For CDMA ZIF applications Usable bandwidth of 25 MHz Compatible with leading chipset suppliers Low loss Single-ended input, 50 Ω Balanced output, 100 Ω

Sawtek filter

Contextual Info: Part Number 856539 2441 MHz SAW Filter Data Sheet Features • • • • • • • • • • • For Bluetooth applications Usable bandwidth of 83.5 MHz Low loss Low profile High attenuation Single-ended operation Excellent selectivity and stop band rejection

GP6NC60HD

Abstract: STGB6NC60HD STGB6NC60HD-1 STGB6NC60HDT4 STGF6NC60HD STGP6NC60HD gp6nc60 600v 100a
Contextual Info: STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features Type VCES VCE sat max @25°C IC @100°C STGB6NC60HD STGB6NC60HD-1 STGP6NC60HD STGF6NC60HD 600V 600V 600V 600V

Contextual Info: STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features Type VCES VCE sat max @25°C IC @100°C STGB6NC60HD STGB6NC60HD-1 STGP6NC60HD STGF6NC60HD 600V 600V 600V 600V

Contextual Info: STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C <2.5V 7A ) s ( t c u d o ) r s ( P t c e Description t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c u O d

M29W128

Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

GP6NC60HD

Abstract: stgf6nc60hd st STGF6NC60HD
Contextual Info: STGB6NC60HD - STGB6NC60HD-1 STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT Features Type VCES VCE sat max @25°C IC @100°C STGB6NC60HD STGB6NC60HD-1 STGP6NC60HD STGF6NC60HD 600V 600V 600V 600V

VN751PTTR

Abstract: VN751PT
Contextual Info: VN751PT High side driver Features Type RDS on Iout VCC VN751PT 60 mΩ 2.5 A 36 V PPAK • CMOS compatible input ■ Thermal shutdown Description ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■

GP6NC60HD

Abstract: gf6nc60hd STGP6NC60HD JESD97 STGB6NC60HD STGB6NC60HDT4 STGF6NC60HD W317
Contextual Info: STGB6NC60HD STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT General features Type VCES VCE sat max @25°C IC @100°C STGB6NC60HD STGP6NC60HD STGF6NC60HD 600V 600V 600V <2.5V <2.5V <2.5V 7A 7A 3A • Low on voltage drop (Vcesat)

JESD97

Abstract: VN751PT VN751PT13TR
Contextual Info: VN751PT High side driver Features Type RDS on Iout VCC VN751PT 60mΩ 2.5A 36 V PPAK • CMOS compatible input ■ Thermal shutdown ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■ Very low stand-by current

M29W128FH

Abstract: M29W128F a8a5 B60000 M29W128FL
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: VN751PT High side driver Features Type RDS on Iout VCC VN751PT 60mΩ 2.5A 36 V PPAK • CMOS compatible input ■ Thermal shutdown ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■ Very low stand-by current

Contextual Info: VN751PT High side driver Features Type RDS on Iout VCC VN751PT 60 mΩ 2.5 A 36 V PPAK • CMOS compatible input ■ Thermal shutdown Description ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■

GD6NC60H

Abstract: JESD97 STGD6NC60H STGD6NC60HT4
Contextual Info: STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH IGBT General features • ■ ■ Type VCES VCE sat Max @25°C IC @100°C STGD6NC60H 600V <2.5V 7A Low on voltage drop (Vcesat) 3 1 Low CRES / CIES ratio (no cross-conduction susceptibility) DPAK

stgf6nc60hd

Abstract: gf6nc60hd
Contextual Info: STGB6NC60HD STGF6NC60HD - STGP6NC60HD N-channel 600V - 7A - D2PAK / TO-220 / TO-220FP Very fast PowerMESH IGBT General features Type VCES VCE sat Max @25°C IC @100°C STGB6NC60HD STGP6NC60HD STGF6NC60HD 600V 600V 600V <2.5V <2.5V <2.5V 7A 7A 3A • Low on voltage drop (Vcesat)

Contextual Info: VN751PT High side driver General features Type RDS on Iout VCC VN751PT 60mΩ 2.5A 36 V PPAK • CMOS compatible input ■ Thermal shutdown ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■ Very low stand-by current

M29W128FH

Abstract: M29W128FL M29W128FH70 Memory Protection Devices JESD97 M29W128F TSOP56 DS2864
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

JESD97

Abstract: VN751PT VN751PT13TR
Contextual Info: VN751PT High side driver Features Type RDS on Iout VCC VN751PT 60mΩ 2.5A 36 V PPAK • CMOS compatible input ■ Thermal shutdown ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■ Very low stand-by current