07JUN2011 Search Results

CAN43111

Abstract: ANCV spbt2532c2.at 0307-ARAJ00079 SPBT2532C2 bluetooth SPBT2532C2 SPBT2532 2450T18A100S B016360 YAGEO
Contextual Info: SPBT2532C2.AT Bluetooth technology class-2 module Features • Bluetooth® specification compliant V2.1 ■ Output power class-2 ■ Transmission rate up to 2 Mbps with EDR ■ Packet types supported: – ACL: DM1, DM3, DM5, DH1, DH3, DH5, 2DH1, 2-DH3, 2-DH5

02APR

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

M48T35

Abstract: STMicroelectronics
Contextual Info: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

ST M48T02

Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

STANDARD DIN 6784

Contextual Info: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■

Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

M48T58

Abstract: STMicroelectronics
Contextual Info: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Field Oriented Control BLDC

Abstract: L6230 VFQFPN-32 footprint VFQFPN32 L6230PDTR vfqfpn-32 VFQFPN thermal resistance
Contextual Info: L6230 DMOS driver for three-phase brushless DC motor Features • Operating supply voltage from 8 to 52 V ■ 2.8 A output peak current 1.4 A RMS ■ RDS(on) 0.73 Ω typ. value @ TJ = 25 °C ■ Integrated fast free wheeling diodes ■ Operating frequency up to 100 kHz

M48T08

Abstract: STMicroelectronics K 2411 equivalent
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

SJ78M05

Contextual Info: SJ78M05 3-Terminal Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TO-252 The SJ78M05 series of three-terminal positive regulators are available in the TO-252 package and with 5Vfixed output

Contextual Info: L6230 DMOS driver for three-phase brushless DC motor Features • Operating supply voltage from 8 to 52 V ■ 2.8 A output peak current 1.4 A RMS ■ RDS(on) 0.73 Ω typ. value @ TJ = 25 °C ■ Integrated fast free wheeling diodes ■ Operating frequency up to 100 kHz

Contextual Info: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection

Contextual Info: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ ■ WRITE protect voltages:

Contextual Info: SPBT2532C2.AT Bluetooth technology class-2 module Features • Bluetooth® specification compliant V2.1 ■ Output power class-2 ■ Transmission rate up to 2 Mbps with EDR ■ Packet types supported: – ACL: DM1, DM3, DM5, DH1, DH3, DH5, 2DH1, 2-DH3, 2-DH5

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR A 1 POSITION DA1 POSITION GA1 PA1-3 3.00 5.50 C POSITION GE7 5 B DIM H 51.85 0.25 46.45 0.20 DATE REVISED PER ECO-14-005178 DWN

STM32L

Abstract: trace code st STM32L152VB STM32L151 st trace code STM32L15
Contextual Info: STM32L152-SK/IAR IAR starter kit for STM32L EnergyLite 32-bit microcontrollers Data brief Features • The IAR Embedded WorkBench for ARM EWARM software package with: – KickStart™ C/C+ compiler for output of code up to 32 Kbytes – VisualSTATE® code generator, 20-state

M48T02

Abstract: STMicroelectronics
Contextual Info: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48Z58 M48Z58Y 5 V, 64 Kbit 8 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

Contextual Info: M48Z35AV 5.0 V or 3.3 V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Battery low flag (BOK) ■