07JUL2005 Search Results

06JAN05

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y RI G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC REV I S I O N S D IS T 00 RESERVED. LTR DE SC R IP T I O N DWN DATE RLSD; ECR-04-000282 0 6 J AN 2 0 0 5 ECR 0 5 - 0 0 5 0 2 4 07JUL2005

STW4N150

Abstract: STP4N150 TO-247 st 0560 L30 diode part marking st 393 STMicroelectronics DIODE marking code JESD97 W4N150
Contextual Info: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

STP4N150

Abstract: 4N150 STFW4N150 STW4N150 W4N150
Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is

diode met st

Abstract: Vdss 1500V
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching

4n150

Abstract: P4N150 STP4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFV4N150 STFW4N150
Contextual Info: STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS on max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω

Contextual Info: 4 3 TH IS DRAWING IS UNPUBLISHED. COPYRIGHT 2 1 RELEASED FOR PUBLICATION 2011_ BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S ALL RIGHTS RESERVED. P LTR DESCRIPTION B2 LOGO & DATE CODE R E V IS E D E C R — 1 3 - 0 0 0 4 7 9 , O B SO LET E 2 - 1 7 3 4 0 8 4 - 1

w4n150

Abstract: P4N150 Marking STMicroelectronics TO 247 STP4N150 STW4N150 N-channel MOSFET to-247 Marking STMicroelectronics to220
Contextual Info: STP4N150 STW4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP4N150 STW4N150 • ■ ■ ■ ■ VDSS RDS on ID Pw 1500 V 1500 V <7Ω <7Ω 4A 4A 160 W 160 W TYPICAL RDS(on) = 5 Ω

STP4N150

Abstract: W4N150 4N150 STFW4N150 STW4N150
Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 2 3 1 TO-220

STP4N150

Abstract: P4N150 creepage W4N150
Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is

Contextual Info: M50LPW080 8 Mbit 1M x8, Uniform Block 3V Supply Low Pin Count Flash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3.0 to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast

STP4N150

Contextual Info: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 very high PowerMESH Power MOSFET Features VDSS RDS on Max (@Tjmax) Type ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances

FV4N150

Abstract: JESD97 STFV4N150
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching

BUL804

Abstract: ELECTRONIC BALLAST WITHOUT ic
Contextual Info: BUL804 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Figure 1: Package n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS n n DEDICATED FOR PFC SOLUTION IN

Contextual Info: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET in TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID Pw STFW4N150 1500 V <7Ω 4A 63 W STP4N150 1500 V <7Ω 4A 160 W STW4N150 1500 V <7Ω 4A 160 W 2 3 1 TO-220 2

FV4N150

Abstract: STFV4N150
Contextual Info: STFV4N150 N-CHANNEL 1500V - 5Ω - 4A TO-220FH Very High Voltage PowerMESH MOSFET Figure 1: Package Table 1: General Features TYPE STFV4N150 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 1500 V <7Ω 4A 40 W TYPICAL RDS(on) = 5 Ω AVALANCHE RUGGEDNESS

Contextual Info: LM2901H High temperature, low-power quad voltage comparators Datasheet − production data Features • Wide single supply voltage range or dual supplies for all devices: +2 V to +36 V or ±1 V to ±18 V ■ Very low supply current 1.1 mA independent of supply voltage (1.4 mW/comparator at +5 V)