07H3997 Search Results

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb S ynchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 : -12 : CL=3 ; CL=3 Units ; MHz : fcK Clock Frequency : io o I 83 tcK Clock Cycle ; 10 Uc Clock Access Tim e Ì • Automatic and Controlled Precharge Command

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Features • High Performance: fcK Clock Frequency • Multiple Burst Read with Single W rite Option -10 CL-3 -12 CL-3 Units ! • Automatic and Controlled Precharge Command 100 83 MHz ! • Data Mask for Read/Write control x4,x8

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8

IBM0316169C

Abstract: IBM0316809C ibm t20
Contextual Info: . IBM0316409C IBM0316809C IBM0316169C 16Mb Synchronous DRAM Preliminary Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

UC07H

Abstract: fccd 111a
Contextual Info: IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option I I -10 CL=3 fc K ! Clock Frequency 1 1 0 0 tcK ! Clock Cycle I 10 tftc ! Clock Access Time I 8 i -12 CL=3 Units • Automatic and Controlled Precharge Command

IT2205

Abstract: IBM0316809CT3-10 g618ac
Contextual Info: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91

IBM0316809C

Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
Contextual Info: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91 83 77

ibm T22

Abstract: IBM0316169C IBM0316809C 22TCK SDRAM 1996
Contextual Info: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3

2TNC

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command 100 91 83 77 MHz • Data Mask for Read/Write control x4,x8