07FEB11 Search Results
07FEB11 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| TO274Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive | Original | IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TO274 | |
| SiP32431DR3-T1GE3
Abstract: N2 SC70 SIP32431DR3 
 | Original | SiP32431 SC70-6, 2011/65/EU 2002/95/EC. 2002/95/EC SiP32431DR3-T1GE3 N2 SC70 SIP32431DR3 | |
| DG406
Abstract: DG406DJ DG406DJ-E3 DG406DN DG406DW DG407 DG407DJ 
 | Original | DG406, DG407 16-Ch/Dual DG406 11-Mar-11 DG406DJ DG406DJ-E3 DG406DN DG406DW DG407 DG407DJ | |
| Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® | Original | Si5419DU 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
| D525MW
Abstract: HP4192A sim card Analog Switch DG2706 DG2707 
 | Original | DG2706 DG2706 11-Mar-11 D525MW HP4192A sim card Analog Switch DG2707 | |
| IRFPS37N50A
Abstract: SiHFPS37N50A SiHFPS37N50A-E3 
 | Original | IRFPS37N50A, SiHFPS37N50A 2002/95/EC Super-247 11-Mar-11 IRFPS37N50A SiHFPS37N50A-E3 | |
| Contextual Info: DG411L, DG412L, DG413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG411L, DG412L, DG413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411, DG412, DG413 with improved performance. | Original | DG411L, DG412L, DG413L DG413L DG411, DG412, DG413 | |
| Contextual Info: SQM120N04-1m7L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0017 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET | Original | SQM120N04-1m7L AEC-Q101 2002/95/EC O-263 O-263 SQM120N04-1m7L-GE3 18-Jul-08 | |
| SI5419D
Abstract: PowerPAK ChipFET Single 
 | Original | Si5419DU 2002/95/EC Si5419DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI5419D PowerPAK ChipFET Single | |
| Contextual Info: SiP32413, SiP32414, SiP32416 Vishay Siliconix Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32413, SiP32414 and SiP32416 are slew rate controlled load switches that is designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V | Original | SiP32413 SiP32414 SiP32416 | |
| Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive | Original | IRFPS38N60L, SiHFPS38N60L 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
| Contextual Info: IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) () VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt | Original | IRFPS37N50A, SiHFPS37N50A 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
| Contextual Info: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon | Original | DG211B, DG212B DG212B DG211, DG212. DG211B 2011/65/EU 2002/95/EC. | |
| Contextual Info: DG411L, DG412L, DG413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG411L, DG412L, DG413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411, DG412, DG413 with improved performance. | Original | DG411L, DG412L, DG413L DG413L DG411, DG412, DG413 | |
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| Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 | Original | IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
| Contextual Info: DG401B, DG403B, DG405B Vishay Siliconix Low-Power, High-Speed CMOS Analog Switches DESCRIPTION FEATURES The DG401B, DG403B, DG405B monolithic analog switches are replacements for the popular DG401/403/405 analog switches and provide improved performance, combining | Original | DG401B, DG403B, DG405B DG405B DG401/403/405 DG401B 11-Mar-11 | |
| DG723Contextual Info: DG721, DG722, DG723 Vishay Siliconix 1.8 V to 5.5 V, 4  Dual SPST Switches DESCRIPTION FEATURES The DG721, DG722 and DG723 are precision dual SPST switches designed to operate from single 1.8 V to 5.5 V power supply with low power dissipation. The DG721, | Original | DG721, DG722, DG723 DG722 DG723 | |
| Contextual Info: SMMB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) () at VGS = 4.5 V 0.046 RDS(on) () at VGS = 2.5 V 0.063 ID (A)a • Halogen-free According to IEC 61249-2-21 | Original | SMMB406EDK SC-75-6L-Single SC-75 2002/95/EC 18-Jul-08 | |
| TLM01100
Abstract: TLMS1100-GS08 TLMG1100-GS08 
 | Original | TLMB1100, TLMG1100, TLMO1100, TLMP1100, TLMS1100, TLMY1100 2002/95/EC 2002/96/EC AEC-Q101 2011/65/EU TLM01100 TLMS1100-GS08 TLMG1100-GS08 | |
| J293Contextual Info: NOTES 2.057 typ [.0 8 1 TYPJ 0.38¿0.13 TYP C. 01 5 ± . 0 0 5 1 TYP} n o rsj in \ n a H \ CONNECTOR W IL L A C C E P T F L E X I B L E P R IN T E D C IR C U I T OR F L A T F L E X I B L E C A B LE ON 2 . 5 4 C . 1003 C ENTERS IN A T H IC K N E S S RANGE OF 0 . 1 2 7 TO 0 .3 8 1 | OCR Scan | ECO-10-000445 ECR-06-04332 FRO00-0011-04 DY/EC/0784 19FEB04 TR10MATE J293 | |
| DG211BDY-E3
Abstract: DG211 DG211B DG211BDJ DG211BDY DG212 DG212B DG212BDJ DG212BDY dg212bdq 
 | Original | DG211B, DG212B DG212B DG211, DG212. DG211B 11-Mar-11 DG211BDY-E3 DG211 DG211BDJ DG211BDY DG212 DG212BDJ DG212BDY dg212bdq | |
| CIE1931
Abstract: VLMW11 
 | Original | VLMW11. 11-Mar-11 CIE1931 VLMW11 | |
| DG403B
Abstract: D1116 DG401BDJ DG401BDY DG403BDY DG405B 
 | Original | DG401B, DG403B, DG405B DG405B DG401/403/405 DG401B 11-Mar-11 DG403B D1116 DG401BDJ DG401BDY DG403BDY | |
| Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET | Original | SUD23N06-31 2002/95/EC O-252 SUD23N06-31-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |