07FEB11 Search Results
07FEB11 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TO274Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive |
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irfps38n60lsihfps38n60l2002/95/ecsuper-247+3 | |
SiP32431DR3-T1GE3
Abstract: N2 SC70 SIP32431DR3
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sip32431sc70-62011/65/eu2002/95/ec+3 | |
DG406
Abstract: DG406DJ DG406DJ-E3 DG406DN DG406DW DG407 DG407DJ
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dg406dg40716-ch/dual11-mar-11+5 | |
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Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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si5419du2002/95/ec2011/65/eujs709a+1 | |
D525MW
Abstract: HP4192A sim card Analog Switch DG2706 DG2707
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dg270611-mar-11d525mwhp4192a+2 | |
IRFPS37N50A
Abstract: SiHFPS37N50A SiHFPS37N50A-E3
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irfps37n50asihfps37n50a2002/95/ecsuper-247+2 | |
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Contextual Info: DG411L, DG412L, DG413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG411L, DG412L, DG413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411, DG412, DG413 with improved performance. |
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dg411ldg412ldg413ldg411+2 | |
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Contextual Info: SQM120N04-1m7L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0017 RDS(on) () at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET |
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sqm120n04-1m7laec-q1012002/95/eco-263+2 | |
SI5419D
Abstract: PowerPAK ChipFET Single
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si5419du2002/95/ecsi5419du-t1-ge32011/65/eu+4 | |
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Contextual Info: SiP32413, SiP32414, SiP32416 Vishay Siliconix Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32413, SiP32414 and SiP32416 are slew rate controlled load switches that is designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V |
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sip32413sip32414sip32416 | |
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Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive |
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irfps38n60lsihfps38n60l2002/95/ecsuper-247+3 | |
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Contextual Info: IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) () VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt |
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irfps37n50asihfps37n50a2002/95/ecsuper-247+2 | |
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Contextual Info: DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon |
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dg211bdg212bdg211dg212+2 | |
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Contextual Info: DG411L, DG412L, DG413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES The DG411L, DG412L, DG413L are low voltage pin-for-pin compatible companion devices to the industry standard DG411, DG412, DG413 with improved performance. |
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dg411ldg412ldg413ldg411+2 | |
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Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 |
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irfps40n50lsihfps40n50l2002/95/ecsuper-247+3 | |
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Contextual Info: DG401B, DG403B, DG405B Vishay Siliconix Low-Power, High-Speed CMOS Analog Switches DESCRIPTION FEATURES The DG401B, DG403B, DG405B monolithic analog switches are replacements for the popular DG401/403/405 analog switches and provide improved performance, combining |
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dg401bdg403bdg405bdg401/403/405+1 | |
DG723Contextual Info: DG721, DG722, DG723 Vishay Siliconix 1.8 V to 5.5 V, 4 Dual SPST Switches DESCRIPTION FEATURES The DG721, DG722 and DG723 are precision dual SPST switches designed to operate from single 1.8 V to 5.5 V power supply with low power dissipation. The DG721, |
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dg721dg722dg723 | |
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Contextual Info: SMMB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 20 RDS(on) () at VGS = 4.5 V 0.046 RDS(on) () at VGS = 2.5 V 0.063 ID (A)a • Halogen-free According to IEC 61249-2-21 |
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smmb406edksc-75-6l-singlesc-752002/95/ec+1 | |
TLM01100
Abstract: TLMS1100-GS08 TLMG1100-GS08
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tlmb1100tlmg1100tlmo1100tlmp1100+9 | |
J293Contextual Info: NOTES 2.057 typ [.0 8 1 TYPJ 0.38¿0.13 TYP C. 01 5 ± . 0 0 5 1 TYP} n o rsj in \ n a H \ CONNECTOR W IL L A C C E P T F L E X I B L E P R IN T E D C IR C U I T OR F L A T F L E X I B L E C A B LE ON 2 . 5 4 C . 1003 C ENTERS IN A T H IC K N E S S RANGE OF 0 . 1 2 7 TO 0 .3 8 1 |
OCR Scan |
eco-10-000445ecr-06-04332fro00-0011-04dy/ec/0784+3 | |
DG211BDY-E3
Abstract: DG211 DG211B DG211BDJ DG211BDY DG212 DG212B DG212BDJ DG212BDY dg212bdq
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dg211bdg212bdg211dg212+7 | |
CIE1931
Abstract: VLMW11
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vlmw1111-mar-11cie1931 | |
DG403B
Abstract: D1116 DG401BDJ DG401BDY DG403BDY DG405B
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dg401bdg403bdg405bdg401/403/405+5 | |
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Contextual Info: SUD23N06-31 Vishay Siliconix N-Channel 60 V D-S , MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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sud23n06-312002/95/eco-252sud23n06-31-ge3+2 | |