07DF Search Results
07DF Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
GPI65007DF
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GaNPower | N-channel 650V 7A GaN Power HEMT in 5x6 DFN package with 170 mΩ Rds(on), 2.1 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. | Original | ||||
WE07DF-B
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SLKOR | 30pF max, IEC 61000-4-2 Level 4 (±15kV air, ±8kV contact), 150W peak, 7V stand-off, DFN1006, <1ns, MSL 1, ROHS. | Original | ||||
JEB07DF
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Jiangsu JieJie Microelectronics Co Ltd | Bi-directional TVS diode JEB07DF in DFN1006-2L package offers 7V reverse working voltage, 11V to 14V clamping voltage at 1A, 35pF junction capacitance, and ESD protection up to ±30kV air and contact per IEC61000-4-2. | Original | ||||
JEU07DF
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Jiangsu JieJie Microelectronics Co Ltd | Uni-directional TVS diode JEU07DF in DFN1006-2L package, designed for ESD protection with 7.0V reverse working voltage, 85pF max capacitance, 13V clamping voltage at 1A, and 150W peak pulse power rating. | Original | ||||
JEB07DFA
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Jiangsu JieJie Microelectronics Co Ltd | Bidirectional TVS diode JEB07DFA for ESD protection with 7V working voltage, low clamping voltage, 10pF typical capacitance, and 6A peak pulse current in DFN1006-2L package. | Original |
07DF Price and Stock
DC Components Co Ltd S07DFLDiode: rectifying; SMD; 200V; 0.7A; SOD123F; Ufmax: 1.1V; Ifsm: 25A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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S07DFL | 3,829 | 20 |
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onsemi NL17SG07DFT2GIC: digital; buffer; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; NL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NL17SG07DFT2G | 3,000 | 1 |
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NL17SG07DFT2G | Tape & Reel | 10 Weeks | 24,000 |
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NL17SG07DFT2G | 12,649 |
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NL17SG07DFT2G | Tape & Reel | 9,000 |
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NL17SG07DFT2G | 5,325 | 1 |
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NL17SG07DFT2G | 10 Weeks | 45,000 |
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NL17SG07DFT2G | 30,000 | 11 Weeks | 3,000 |
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NL17SG07DFT2G |
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onsemi MC74VHC1G07DFT1GIC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC74VHC1G07DFT1G | 2,680 | 1 |
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MC74VHC1G07DFT1G | Tape & Reel | 30,000 | 3,000 |
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MC74VHC1G07DFT1G | 18,817 |
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MC74VHC1G07DFT1G | Cut Tape | 9,000 |
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MC74VHC1G07DFT1G | Bulk | 100 |
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MC74VHC1G07DFT1G | 24,038 |
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| MC74VHC1G07DFT1G | 43 | 1 |
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MC74VHC1G07DFT1G | 58 Weeks | 45,000 |
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MC74VHC1G07DFT1G | 53 Weeks | 3,000 |
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MC74VHC1G07DFT1G | 12,000 | 53 Weeks | 3,000 |
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MC74VHC1G07DFT1G |
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onsemi NL17SZ07DFT2GIC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NL17SZ07DFT2G | 1 | 1 |
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NL17SZ07DFT2G | Tape & Reel | 59 Weeks | 3,000 |
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NL17SZ07DFT2G | 10,196 |
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NL17SZ07DFT2G | Cut Tape | 9,000 |
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| NL17SZ07DFT2G | Tape & Reel | 9,000 |
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NL17SZ07DFT2G | Bulk | 1 |
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NL17SZ07DFT2G | 9,201 |
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| NL17SZ07DFT2G | 2,560 | 1 |
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NL17SZ07DFT2G | 1,590 | 1 |
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NL17SZ07DFT2G | 559 |
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NL17SZ07DFT2G | 68 Weeks | 60,000 |
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NL17SZ07DFT2G | 53 Weeks | 3,000 |
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NL17SZ07DFT2G | 53 Weeks | 3,000 |
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NL17SZ07DFT2G | 30,000 |
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onsemi MC74VHC1G07DFT2GIC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MC74VHC1G07DFT2G | 15,000 |
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MC74VHC1G07DFT2G | Tape & Reel | 51,000 |
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| MC74VHC1G07DFT2G | Tape & Reel | 38 Weeks, 4 Days | 30,000 |
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MC74VHC1G07DFT2G | 6,184 |
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MC74VHC1G07DFT2G | Tape & Reel | 3,000 |
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MC74VHC1G07DFT2G | 30,000 | 1 |
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MC74VHC1G07DFT2G | 225,000 | 58 Weeks | 45,000 |
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MC74VHC1G07DFT2G | 84,000 | 52 Weeks | 3,000 |
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MC74VHC1G07DFT2G | 53 Weeks | 3,000 |
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MC74VHC1G07DFT2G | 18,000 |
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07DF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/ |
Original |
ds411-00003-1v0-emb97r803a/bmb97r804a/bmb97r804a/ | |
R14 P1F
Abstract: N-333 PP7F 1BE3 P53 transistor A1-U1-U17-A17 3LH30 zz12
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Original |
32-bittlcs-900/h1tmp92cf26axbgtmp92cf26a+9 | |
MSM64162
Abstract: QFP80-P-1420-0 l9910 MSM64162-XXX
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Original |
e2e0033-38-93msm64162nx4/20qfp80-p-1420-0+3 | |
KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
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Original |
kfg2g16q2a-debxkfh4g16q2a-debxkfg2g16q2akfh4g16q2a+7 | |
W25Q40BW
Abstract: 25Q40B 25Q40BW
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Original |
w25q40bw150-mil25q40b25q40bw | |
CSB500E5
Abstract: MSM64172 TA1030
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Original |
j2e0032-38-95msm64172msm64172cpunx-4/2041msm641725ms+6 | |
11b3 DIODE
Abstract: diagrams hitachi ecu RTD 1185 DATA SHEET M32R RTD rtd ic 1117 3.3 analog devices 118a ECU 206 FD31 hitachi ecu datasheet
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Original |
32-bitm32r/em32r/ecu11b3 diode+9 | |
SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
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Original |
am29lv2562ms29gl512nsa452sa336+7 | |
M29W128GL
Abstract: M29W128GH70 M29W128G M29W128GL7
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Original |
m29w128ghm29w128gl128-mbit64-byte+5 | |
4GB MLC NAND
Abstract: SAMSUNG NAND Flash MLC
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Original |
kfm2g16q2m-debxkfn4g16q2m-debxkfm2g16q2mkfn4g16q2m+3 | |
PIC16F877A Microcontroller
Abstract: MPASM assembler directives PIC16f873a example code to config spi PIC 18F4520 C p18f452 PIC18 example C18 codes lcd free projects for PIC 16f877A EMBEDDED C BOOKS IN PIC16F877A DS33014J PIC18 example C18 codes mmc card
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Original |
ds33014jds33014j-pagepic16f877a microcontrollermpasm assembler directives+7 | |
EN39SL160
Abstract: cFeon EN cFeon serial Flash chip 07c0
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Original |
en39sl160h/l2048k1024k16-bit+5 | |
Spansion S29GL512N11Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages |
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s29glxxxns29gl512ns29gl256ns29gl128n+4 | |
asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
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s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14 | |
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S25FL004K
Abstract: FL004KIF S25FL FL004K SOA008 208-mils
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s25fl004k104-mhzfl004kifs25fl+3 | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
rej09b0123-0110 | |
120R
Abstract: C8800
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Original |
am29lv2562m120rc8800 | |
EN25QH
Abstract: 1AEF00 cFeon* SPI Flash
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Original |
en25qh256m-bit/32k-byte/13180mhz+4 | |
l256mh113
Abstract: L256ML123R
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Original |
am29lv256ml256mh113l256ml123r | |
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Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, |
Original |
s29gl-ns29gl512ns29gl256ns29gl128n+3 | |
Instructions of TMS320C54X
Abstract: TMS320
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Original |
tms320tms320c54xspra2670000h+7 | |
L256MH113R
Abstract: L256ML113R
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Original |
am29lv256ml256mh113rl256ml113r | |
a22t
Abstract: S19G S29GL-N
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Original |
s29gl-ns29gl512ns29gl256ns29gl128n+2 | |
S29GL-N
Abstract: 1E300
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Original |
s29gl512/256/128ns29gl512ns29gl256ns29gl128n+2 | |