07DEC2004 Search Results

Contextual Info: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC

Contextual Info: VNQ810PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 160 m(1) 5 A(1) 36 V 1. Per each channel. PowerSSO-24 •CMOS compatible inputs Description •Open Drain status outputs •On-state open load detection The VND810PEP-E is a monolithic device made

M25PE80

Abstract: 024KB
Contextual Info: M25PE80 8 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 8-Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical

noise reduction capacitor

Abstract: LD3986 LD3986J12248R LD3986J2528R LD3986J2818R LD3986J2830R LD3986J285R LD3986J29R LD3986J30R LD3986J3131R
Contextual Info: LD3986 SERIES DUAL ULTRA LOW DROP-LOW NOISE BICMOS VOLTAGE REG. FOR USE WITH VERY LOW ESR OUT. CAPACITORS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ INPUT VOLTAGE FROM 2.5V TO 6V STABLE WITH LOW ESR CERAMIC CAPACITORS ULTRA LOW DROPOUT VOLTAGE 60mV TYP. AT 150mA LOAD, 0.4mV TYP. AT 1mA

STF20N20

Contextual Info: STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET PRELIMINARY DATA Figure 1: Package Table 1: General Features TYPE STD20N20 STF20N20 STP20N20 • ■ ■ ■ VDSS RDS on Id PTOT 200 V 200 V

e2p 25

Abstract: M36W0R6050T0
Contextual Info: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •

Contextual Info: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output

ma 7050

Abstract: GR-1089 SMP100LC SMP100LC-270 TRISIL SMP st L35
Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min

Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.

M28W640FSU

Abstract: 8857H A0-A21 M28W320FSU
Contextual Info: M28W320FSU M28W640FSU 32Mbit 2Mb x16 and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 2.7V to 3.6V for Input/Output

ISO7637

Abstract: VNQ830PEP-E VNQ830PEPTR-E
Contextual Info: VNQ830PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 60mΩ(1) 14A(1) 36V 1. Per each channel. PowerSSO-24 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open load detection ■ Off-state open load detection

M25PE10

Abstract: M25PE20 Ai329 20H80H
Contextual Info: M25PE20 M25PE10 1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout Features • 1 or 2 Mbit of page-erasable Flash memory ■ 2.7 V to 3.6 V single supply voltage ■ SPI bus compatible serial interface

M25PE80

Abstract: ST10
Contextual Info: M25PE80 8 Mbit, low-voltage, Page-Erasable Serial Flash memory with Byte alterability, 50MHz SPI bus, standard pinout Feature summary • Industrial Standard SPI Pin-out ■ 8 Mbits of Page-Erasable Flash Memory ■ Page Write up to 256 Bytes in 11ms (typical)

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 TYCO ELECTRONICS CORPORATION. FOR 20 PUBLICATION ALL R 1G H T S LOC RESERVED. AD REV I S IONS D I ST 00 CONTACT L A AREA A A A A A A A A DESCRIPTION LTR DATE [ WN APVD R E V PER EC OS I 2 - 0 3 2 4 - 0 4

TRISIL SMP

Abstract: ITU-T-K20 trisil L32* MARKING MARKING L09
Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 2 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min.

Contextual Info: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E • IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V PPAK ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC

Contextual Info: STP20NF06 STF20NF06 N-channel 60V - 0.06Ω - 20A - TO-220/TO-220FP STripFET II Power MOSFET Features Type VDSS RDS on ID STP20NF06 60V <0.07Ω 20A STF20NF06 60V <0.07Ω 20A(1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value

Contextual Info: VNQ830PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 60mΩ(1) 14A(1) 36V 1. Per each channel. PowerSSO-24 • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection

Contextual Info: STP20NF06 STF20NF06 N-channel 60V - 0.06Ω - 20A - TO-220/TO-220FP STripFET II Power MOSFET Features Type VDSS RDS on ID STP20NF06 60V <0.07Ω 20A STF20NF06 60V <0.07Ω 20A(1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value

p140nf55

Abstract: p140nf B140NF55 STP140NF55 p140n schematic diagram electrical motor control st 393 STMicroelectronics DIODE marking code JESD97 STB140NF55
Contextual Info: STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID (1) STB140NF55 55V <0.008Ω 80A STB140NF55-1 55V <0.008Ω 80A STP140NF55 55V <0.008Ω 80A 3 1. Current limited by package

VN820B5

Abstract: ISO7637 VN820B5-E VN820-E VN820PT-E VN820SO-E VN820SP-E
Contextual Info: VN820-E High-side driver Features 10 Type RDS on IOUT VCC 1 PowerSO-10 VN820-E VN820SP-E VN820B5-E VN820SO-E VN820PT-E 40 mΩ 9A PPAK 36 V PENTAWATT • CMOS compatible input ■ On-state open load detection ■ Off-state open load detection ■ Shorted load protection

GR-1089

Abstract: SMP100LC TRISIL SMP relay 220V
Contextual Info: SMP100LC Trisil for telecom equipment protection Features • Bidirectional crowbar protection ■ Voltage range from 8 V to 400 V ■ Low capacitance from 20 pF to 45 pF @ 50 V ■ Low leakage current : IR = 2 µA max ■ Holding current: IH = 150 mA min

F20NF06

Abstract: P20NF06 STF20NF06 JESD97 STP20NF06 TO220
Contextual Info: STP20NF06 STF20NF06 N-channel 60V - 0.06Ω - 20A - TO-220/TO-220FP STripFET II Power MOSFET Features Type VDSS RDS on ID STP20NF06 60V <0.07Ω 20A STF20NF06 60V <0.07Ω 20A(1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value

LD3986

Abstract: LD3986J12248R LD3986J12248R-E LD3986J122R-E LD3986J1828R-E LD3986J2528R-E LD3986J285R-E LD3986J28R-E LD3986J29R-E LD3986J30R-E
Contextual Info: LD3986 SERIES DUAL ULTRA LOW DROP-LOW NOISE BICMOS VOLTAGE REG. FOR USE WITH VERY LOW ESR OUT. CAPACITORS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ INPUT VOLTAGE FROM 2.5V TO 6V STABLE WITH LOW ESR CERAMIC CAPACITORS ULTRA LOW DROPOUT VOLTAGE 60mV TYP. AT 150mA LOAD, 0.4mV TYP. AT 1mA