07DEC10 Search Results
07DEC10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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VT30L60C, VIT30L60C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT30L60C 2002/95/EC. | |
Contextual Info: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VFT30L60C ITO-220AB 22-B106 2002/95/EC 2002/96/EC ITO-220trademarks 2011/65/EU 2002/95/EC. | |
VBT30L60CContextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 VBT30L60C | |
Contextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
Contextual Info: VBT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT4060C O-263AB J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT4060C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
Contextual Info: CLA, CLB Vishay Electro-Films Thin Film Eight Resistor Array FEATURES Product may not be to scale • Wire bondable • Eight equal value resistors on a 0.060" x 0.090" chip • Resistance range: 20 Ω to 1 MΩ The CLA and CLB resistor arrays are the hybrid equivalent |
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18-Jul-08 | |
TSOP4438
Abstract: TSOP4838 IR receiver remote control transmitter and receiver circuit f
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TSOP22. TSOP24. TSOP48. TSOP44. 2002/95/EC 2002/96/EC TSOP4438 TSOP4838 IR receiver remote control transmitter and receiver circuit f | |
Contextual Info: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES P case top P case bottom B and T cases Q, S and A cases • P case offers single-sided lead Pb -free terminations RoHS • Wraparound lead (Pb)-free terminations: Q, S, |
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EIA-481-1 2002/95/EC 18-Jul-08 | |
Contextual Info: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT4060C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
Contextual Info: New Product VFT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VFT4060C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
Contextual Info: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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VT30L60C, VIT30L60C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT30L60C 2011/65/EU | |
TF3C226
Abstract: 40113 071 0039 TF3C10
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535BAAC 2002/95/EC 18-Jul-08 TF3C226 40113 071 0039 TF3C10 | |
Contextual Info: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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VT30L60C, VIT30L60C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT30L60C 2011/65/EU | |
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Contextual Info: VLMO31. Vishay Semiconductors Standard SMD LED PLCC2 FEATURES 94 8553 DESCRIPTION This device has been designed for applications requiring narrow brightness and color selection. The package of this device is the PLCC-2. It consists of a lead frame which is embedded in a |
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VLMO31. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
Contextual Info: New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K |
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VT4060C, VIT4060C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT4060C 11-Mar-11 | |
Contextual Info: New Product VT4060C, VIT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K |
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VT4060C, VIT4060C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT4060C 2011/65/EU | |
Contextual Info: VLMO31. Vishay Semiconductors Standard SMD LED PLCC2 FEATURES 94 8553 DESCRIPTION This device has been designed for applications requiring narrow brightness and color selection. The package of this device is the PLCC-2. It consists of a lead frame which is embedded in a |
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VLMO31. JESD22-A114-B AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
J-STD-002
Abstract: VIT4060C
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VT4060C, VIT4060C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT4060C 18-Jul-08 J-STD-002 VIT4060C | |
Contextual Info: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VFT30L60C ITO-220AB 22-B106 2002/95/EC 2002/96/EC ITO-220hay 11-Mar-11 | |
J-STD-075
Abstract: mkt hq 372 MKT 1840 MKP 376 MKP 1813 Vishay MKP 1848 mkt hq 371 Vishay MKP 339 KP1830 mkp 339M
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07-Dec-10 J-STD-075 mkt hq 372 MKT 1840 MKP 376 MKP 1813 Vishay MKP 1848 mkt hq 371 Vishay MKP 339 KP1830 mkp 339M | |
EF16HP09-QO
Abstract: LNK574 LNK574DG DER-258 EN550022 E-Shield Transformer Techniques for Low EMI TDK Ferrite Core PC44 vishay 1N4007 DO-214AC EKZE160ELL331MHB5D SBCP-47HY102B
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LNK574DG DER-258 EF16HP09-QO LNK574 LNK574DG DER-258 EN550022 E-Shield Transformer Techniques for Low EMI TDK Ferrite Core PC44 vishay 1N4007 DO-214AC EKZE160ELL331MHB5D SBCP-47HY102B | |
Contextual Info: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VFT30L60C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A |