07DEC1 Search Results
07DEC1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 4 2 1”= 1.50 2 ”= 2.50 NOTES: SEE SHEET 2. REVISIONS LTR U1 1”= 1.270 '32.26' 2 ”= 2.270 '57.66' V DESCRIPTION REVISED PER ECO-1 1 - 0051 39 REVISED PER ECO -12 - 0 2 0 9 6 7 DATE APPROVED 20APR11 HMR 07DEC12 CT 2X CABLE CLAMP TYPICAL PLUG AND RECEPTACLE |
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20APR11 07DEC12 MTC100â JH1-R22 | |
Contextual Info: 2 4 TH IS DRAWING IS U N P U B L IS H E D . RELEASED FOR PUBLICATION COPYRIGHT R E V IS IO N S 50 ALL RIGHTS RESERVED. By - LTR D E S C R IP TIO N w R EVISED PER DATE E C R - 1 1-01 806 3 07DEC11 DWN APVD KH PD P D SINGLE OR OPTIONAL DOUBLE PILOT HOLE .0 35 |
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07DEC11 | |
Contextual Info: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - REVISIONS - 50 RESERVED. - LTR AD D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 07DEC11 DWN APVD KH PD D DIM’S IN BRACKETS ARE |
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07DEC11 | |
Contextual Info: 4 T H IS D R A W IN G S U N P U B L IS H E D . 3 RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - 2 .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N REVISED PER DATE E C R - 1 1-01 8 0 6 3 07DEC11 DWN APVD KH PD D 1 CO NTINU O US |
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07DEC11 | |
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - 2 - R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N Z RE VISED PER DATE E C R - 1 1-01 8 0 6 3 07DEC11 DWN APVD KH PD 1 .52 1 .27 |
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07DEC11 | |
ebu150Contextual Info: New Product VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode |
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VS-EBU15006HF4 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 ebu150 | |
Contextual Info: New Product VT30L60C, VIT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses |
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VT30L60C, VIT30L60C O-220AB O-262AA 22-B106 2002/95/EC 2002/96/EC VT30L60C 2002/95/EC. | |
Contextual Info: VS-EBU15006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package |
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VS-EBU15006HF4 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: IHLP-1616BZ-A1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite |
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IHLP-1616BZ-A1 AEC-Q200 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: IHLP-1616BZ-A1 www.vishay.com Vishay Dale Low Profile, High Current IHLP Inductors FEATURES • Shielded construction • Lowest DCR/ H, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite |
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IHLP-1616BZ-A1 AEC-Q200 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VFT30L60C ITO-220AB 22-B106 2002/95/EC 2002/96/EC ITO-220trademarks 2011/65/EU 2002/95/EC. | |
VBT30L60CContextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 11-Mar-11 VBT30L60C | |
Contextual Info: New Product VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT30L60C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
Contextual Info: VBT4060C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT4060C O-263AB J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: FP.P www.vishay.com Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities |
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2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Ablestik 84-1 lmis
Abstract: XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis
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QRSR9401 QR103. Ablestik 84-1 lmis XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis | |
Contextual Info: CLA, CLB Vishay Electro-Films Thin Film Eight Resistor Array FEATURES Product may not be to scale • Wire bondable • Eight equal value resistors on a 0.060" x 0.090" chip • Resistance range: 20 Ω to 1 MΩ The CLA and CLB resistor arrays are the hybrid equivalent |
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18-Jul-08 | |
ec 9303Contextual Info: FP.P www.vishay.com Vishay Dale Metal Film Resistors, Pulse Withstanding Protective FEATURES • Special Vishay Dale design provides lightning withstand characteristics along with resistor functionality • A thicker tin oxide power film system provides lightning surge absorption capabilities |
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2002/95/EC 11-Mar-11 ec 9303 | |
SMN0665
Abstract: TO-220F-3L
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SMN0665FD SMN0665FD SMN0665 O-220F-3L O-220F-3L SDB20D45 07-DEC-12 KSD-T0O122-000 TO-220F-3L | |
si4554Contextual Info: Si4554DY-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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Si4554DY-GE3 AN609, 07-Dec-11 si4554 | |
TSOP4438
Abstract: TSOP4838 IR receiver remote control transmitter and receiver circuit f
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TSOP22. TSOP24. TSOP48. TSOP44. 2002/95/EC 2002/96/EC TSOP4438 TSOP4838 IR receiver remote control transmitter and receiver circuit f | |
Contextual Info: 572D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Coated, Maximum CV FEATURES P case top P case bottom B and T cases Q, S and A cases • P case offers single-sided lead Pb -free terminations RoHS • Wraparound lead (Pb)-free terminations: Q, S, |
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EIA-481-1 2002/95/EC 18-Jul-08 | |
Contextual Info: New Product VBT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation |
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VBT4060C O-263AB J-STD-020, 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
Contextual Info: New Product VFT4060C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation |
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VFT4060C ITO-220AB 22-B106 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A |