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Infineon Technologies AG


Infineon Technologies AG BSC079N10NSG Trans MOSFET N-CH 100V 13.4A 8-Pin TDSON EP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	BSC079N10NSG		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG BSC079N10NSGATMA1 MOSFET N-Channel 100V 13.4A (Ta), 100A (Tc) 8-SON T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	BSC079N10NSGATMA1				1	1 - 10 - 100 $1.59 1000 $1.32 10000 $1.18	Buy Now
TME	BSC079N10NSGATMA1				5,000	1 - 10 - 100 - 1000 - 10000 $0.99	Get Quote

079N10NS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
079N10NS Abstract: BSC079N10NS IEC61249-2-21 JESD22 Contextual Info: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, Normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature	Original	bsc079n10ns iec61249-2-21 079n10ns jesd22	PDF
079N10NS Abstract: BSC079N10 Contextual Info: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	bsc079n10ns 079n10ns bsc079n10	PDF
079N10NS Contextual Info: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	bsc079n10ns 079n10ns	PDF
nc 80 Abstract: BSC079N10NS JESD22 079N10NS Contextual Info: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	bsc079n10ns 079n10ns nc 80 jesd22	PDF
Contextual Info: 079N10NS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 7.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 150 °C operating temperature	Original	bsc079n10ns 079n10ns	PDF