07 MARKING CODE MOSFET Search Results

Contextual Info: FastIRFET IRFH4210PbF HEXFET Power MOSFET VDSS 25 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 1.10 m 1.35 Qg (typical)  nC ID (@TC (Bottom) = 25°C) 245 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters

Contextual Info: FastIRFET IRFH4213PbF HEXFET Power MOSFET VDSS 25 RDS on max (@ VGS = 10V) (@ VGS = 4.5V) V 1.35 m 1.90 Qg (typical) 26 nC ID (@TC (Bottom) = 25°C) 204 A PQFN 5X6 mm Applications  Synchronous Rectifier MOSFET for Synchronous Buck Converters

Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS N-Channel Small Signal MOSFET FMSBSS138 List List. 1 Package outline. 2

SPN2304

Abstract: MOSFET SPN2304S23RG
Contextual Info: SPN2304 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2342

Abstract: MOSFET SPN2342S23RGB SPN2342S23RG
Contextual Info: SPN2342 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2342 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2318S23RGB

Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet
Contextual Info: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

07 MARKING CODE MOSFET

Abstract: SPN3400 SPN3400S23RG
Contextual Info: SPN3400 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2302A

Abstract: MOSFET SPN2302AS23RGB SPN2302AS23RG
Contextual Info: SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

MOSFET

Abstract: SPP2319 P-Channel mosfet 40V
Contextual Info: SPP2319 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2319 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2302DS23RG

Abstract: marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23
Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

SPN3414

Abstract: MOSFET SPN3414S23RG SPN3414S23RGB
Contextual Info: SPN3414 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SPN2302DS23RG

Contextual Info: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

Contextual Info: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2

Contextual Info: N-Channel SMD MOSFET Formosa MS FMSBSS138 List List. 1 Package outline. 2 Features. 2

Small Signal MOSFET

Abstract: FMSBSS138 BSS138-H
Contextual Info: N-Channel Small Signal MOSFET Formosa MS FMSBSS138 List List. 1 Package outline. 2

FMS2303

Abstract: POWER MOSFET P1 smd marking code FMS2303-H
Contextual Info: SMD MOSFET Formosa MS FMS2303 List List. 1 Package outline. 2 Features. 2

SOT-23

Abstract: MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23
Contextual Info: SMD MOSFET Formosa MS FMS2301 List List. 1 Package outline. 2 Features. 2

Contextual Info: IRF7748L1TRPbF IRF7748L1TR1PbF DirectFET N-Channel Power MOSFET  Applications RoHS Compliant, Halogen Free  Lead-Free Qualified up to 260°C Reflow Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification

Contextual Info: IRF7739L1TRPbF IRF7739L1TRPbF DirectFET™ Power MOSFET ‚ Applications l RoHS Compliant, Halogen Free  l Lead-Free Qualified up to 260°C Reflow l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification

waag

Contextual Info: SMD MOSFET Formosa MS FMS2301A List List. 1 Package outline. 2 Features. 2

Contextual Info: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2

SOT-23

Contextual Info: Formosa MS N-Channel Power MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2