07 F DM Search Results

1N4002

Abstract: 1N4148 C2100 MAX3232CSE TLE7259 MB96F
Contextual Info: Fujitsu Microelectronics Europe Application Note MCU-AN-300205-E-V16 F²MC-16FX FAMILY 16-BIT MICROCONTROLLER ALL SERIES USART APPLICATION NOTE USART Revision History Revision History Date 2006-04-28 2006-12-07 2007-02-21 2007-08-29 2007-10-10 2008-07-07 2010-02-19

Vybrid Reference Manual

Abstract: TAG 8634 vybrid
Contextual Info: Vybrid Reference Manual F-Series Document Number: VYBRIDRM Rev. 5, 07/2013 Vybrid Reference Manual, Rev. 5, 07/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 About This Document 1.1 1.2

relay 24v 3a

Abstract: relay 24v 10a CMX60D10 CMX60D20 36V 3A led SOLID STATE RELAY 3A DMP6301A CMX200D3 DC DC INPUT 24V OUTPUT 6V MPDCD3-b
Contextual Info: Solid - State - Relais CRYDOM Halbleiter Relais MBI Industrievertretungen 1/07 CMX60D20 – CMX60D10 - CMX100D6 - CMX200D3 - DMP6301 –MPDCD3-B DC/DC DC/DC DMP CMX ? ? ? ? DC / DC LED im Eingang / LED indication status Federzugklemmen Index: - F / cage-clamp -F

8-24UNEF-2B

Contextual Info: REV, DATE DESCRIPTION NC 07/07/04 INITIAL RELEASE 5 / 8 -2 4 U N E F -2 B .50 [0.020]-|t— 17.00 [0.670]- UNLESS DTHDVBE S^ffiRCD aUCNSONS ARC IN ULLMCTER3- DMEN3KH3 IN [ ] ARC M APPROVALS DATE G.R.S. Û7/Û7/Û4 HUES AND FQft «WTOMffl REFERANCE DULY, 0.5 - 8mm ± 0.20mm

Pan1321

Abstract: PMB8753 T8753 Infineon Specific HCI Commands bluetooth bluemoon T8753-2 DS-1321-2400-103-V0 2-XV10T1 infineon spp at commands CLK32
Contextual Info: Preliminary Product Overview D S- 13 21-2400-1 03-V0.9 July 2008 ENW89811x4CF Bluetooth QD ID: Published after Qualification PAN1321-SPP I nfine o n ’ s BlueMoonUniversal Platform Wireless Modules  Edition 2008-07-07 Published by Panasonic Electronic Devices Europe GmbH,

ED-96

Abstract: DC600V Ed96
Contextual Info: 6100096681 TO 41749 SEGEA F’RO!I61O25 0 2 07/26/’96 12:10 07,’26 SPEC. Ny,. s~ l?:i? P,02,’14 ED-96028 ‘“w PAGE -.> .— ELECTRONIC COMPO~NTS REPwSEWAlh GROUP SHARP CORPOWTION OPTO-ELECTRONIC DEVICES DIV. SPECIFICATION I DEVICE SPECIFICATION POR

ESJC07-09B

Abstract: GGT DIODE ESJC07 ESJC07-12B
Contextual Info: ESJC07 9kV, 12kV : O u tlin e D ra w in g s F HIGH VOLTAGE SILICON DIODE E S J C 07& , ESJC 07 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

JW-22CU

Abstract: STR F12 jw-13pg jw-2HC ZM-61E JW212 B0344 b0345 Z-312J JW-21su
Contextual Info: 00 09 00 04 40 1 00 00 00 00 Fc C 12w M P 00 00 09 04 40 1 00 09 00 SU 211 B w 19 7 Fc P 2 c1 M C 00 1 6 F 90 44 1 07 35 6 07 35 7 09 00 5 73 6 1 44 C M P 00 40 4 19 00 w 12 Fc 00 00 04 1W 21 FC 09 00 SU B 07 35 7 09 Sample of programs 07 35 4 00 ニュー

Contextual Info: EC Axialventilatoren für Stalllüftungen Die Wahl der Ingenieure Ausgabe 07/2011 Die neuen EC Axialventilatoren für Stalllüftungen Energieeffiziente Ventilatoren gewinnen auch in der Landwirtschaft immer mehr an Bedeutung. Getrieben durch gesetzliche Vorschriften und steigende Energiekosten verlangt der Markt neue

Contextual Info: REVISIONS DESCRIPTION REV 560 14.2 mm .375 REF (9.5mm) DATE 01 2 SEE ECN 8 0 -0 0 8 4 01 REDRAWN ON CAD, ECN 9 2 -0 0 1 0 3 BZ 2/26/80 W $f OSS» 07/09/92 DM 7/16/99 REVISED PER ECN 9 9 -0 0 9 4 01 4 APPROVED VM 2/22/60 07/14/92 S ".^¡ .065 (1.7 mm) OSM JACK

Contextual Info: POLYFET R F DEVICES D VBMIGQT QGQOQBS b • POLYFET RF DEVICES F1201 7-.3?'07 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown.

MBR2045CT

Abstract: MBR2035CT MBR2035CT-1 MBR2045CT-1 MBRB2035CT MBRB2045CT SMD-220
Contextual Info: 2002-02-20 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-245-99 MBR2035CT sch diodTO-220AB 70-246-07 MBR2045CT sch diodTO-220AB PD-2.320 rev. B 06/99 MBR2045CT MBRB2045CT

AN-994

Abstract: IRLZ44N IRLZ44NL IRLZ44NS
Contextual Info: 2002-03-07 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-189-38 IRLZ44NS HEXFET D2Pak PD - 91347D IRLZ44NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRLZ44NS

IRLIZ44N

Abstract: IRLZ44N
Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-07 IRLIZ44N HEXFET TO-220 PD - 9.1498A IRLIZ44N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology

DME3256-000

Abstract: DMF6554-000 DMB2855-000 DMJ3102-000 132-042 DMJ4317-000 DMJ3086-000 DMJ3086 DME3014-000 silicon di for microwave diode mixer
Contextual Info: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R _ 4ÛE D • 0 S Ô S 4 4 3 0 0 0 1 1 Q S ¿145 ■ ALP ék . Features '^ k \ / T *07*07 ^ / ■ Ideal for MIC ■ Low 1/f Noise Low Intermodulation Distortion Low Turn On

Contextual Info: July 2008 HY[B/I]18T1G400C2[C/F] L HY[B/I]18T1G800C2[C/F](L) HY[B/I]18T1G160C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM Internet Data Sheet Rev. 1.50 Internet Data Sheet HY[B/I]18T1G[40/80/16]0C2[C/F](L) 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.50, 2008-07

91836

Contextual Info: REVISIONS N J 4 ^ O J o 7 / 1 6 -2 8 U N E F -2 A TH’D I NO I * ER KH 36836 02/15/96 CN KH 37022 A 06/21/96 CN JJS 37087 E 08/07/96 CN KH 37428 D 04/07/98 REVISED PER DMF304 ER36216 TZ 12/22/11 SEE SHEET 2 FOR KEYING ANGLE 4 - 4 0 U N C -2 B TH’D MARK: KINGS 2 4 3 0 - 2 - *

HYB25D256160CF

Abstract: DDR200 DDR266 DDR400 DDR400B HYB25D256 P-TFBGA-60
Contextual Info: Data Sheet, V0.5, May 2003 R Y HYB25D256400C[E/F] L HYB25D256800C[E/F](L) HYB25D256160C[E/F](L) P R E LI M IN A 256-Mbit Double Data Rate SDRAM Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-05-07 Published by Infineon Technologies AG,

J32CG

Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
Contextual Info: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0

peak repetitive forward current 2.0

Abstract: MBR10 MBR1035 MBR1045 MBRB10 MBRB1035 MBRB1045 SMD-220 MBR10. Series
Contextual Info: Bulletin PD-2.317 rev. F 07/03 MBR10. Series MBRB10. Series SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Characteristics Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

radar detector 10.5 ghz local oscillator

Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T O R 0 5 A S M M 3 Q D D l l M b 3bfl • ALP 43E D * Features T í á,í' ■ ■ ■ ■ ■ 07-07 Bonded Junctions for Reliability Low 1/f Noise Low Turn On for Starved L.O. Applications

Contextual Info: July 2008 HYB18T C1G 80 0 C2 F HYB18T C1G 16 0 C2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.10 Internet Data Sheet HYB18TC1G[80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.10, 2008-07

Contextual Info: Bulletin PD-2.317 rev. F 07/03 MBR10. Series MBRB10. Series SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Characteristics Description/ Features This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

Contextual Info: P r o d u c t S p e cifica tio n t t f C O j Bectronii 108-5471 » ft» « M SP 26 JA N 07 Rev.O .040 Series Multi-Lock Connector wire to wire (.040MLC) .040 v 'h X •7 J l t f •3* :* »SE«bS)(.040M LC) Contents F irst 9 pages following this top sh eet