06MAR200 Search Results

Tabelle

Contextual Info: DocManager Die Tabellenseiten müssen einzeln gedruckt werden. Ab XP macht der Imagewriter nur noch Gruppe 4 komprimierte TIFs, diese mit TECview noch mal als Gruppe 3 speichern, sonst wird das PDF riesengroß A5 3-…-2 – 4-.-4 hinzu 06MAR2007 KS A6 4-…-5 – 4-.-6 hinzu

tsop32 8x20

Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127
Contextual Info: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O

STM32F10xxx Library Manual

Abstract: stm32f10x manual UM0685 STM3210B-EVAL STM32F1
Contextual Info: UM0685 User manual CEC consumer electronic control C library using the STM32F101xx, STM32F102xx and STM32F103xx microcontrollers Introduction This user manual describes the CEC library using the STM32F10xxx microcontroller family. Consumer electronic control (CEC) is a feature of the HDMI interface 1.3 standard (high

STM8L101x3

Abstract: STM8L151G C 5198 ST7WIND11 ST7WIND21 STM8S105K6 RLINK st7 stm8 stm8s105 MODULE ST72F63 STM8L cpu programming manual
Contextual Info: RN0013 Release notes ST Visual Develop STVD release 4.1.3 Introduction These are the release notes for Release 4.1.3 of the ST integrated development environment, which is now called ST Visual Develop and abbreviated to STVD. The name change from STVD7 to STVD reflects the extension of the development environment to

M28W320BB

Abstract: M28W320BT
Contextual Info: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■

3M Philippines

Contextual Info: LFTVS18-1F3 Low forward voltage Transil , transient voltage suppressor Datasheet  production data Features • Strong ESD and EOS protection ■ Very low clamping factor VCL/VBR ■ Unidirectional device ■ Fast response time ■ Very thin package ■

Contextual Info: L5150GJ 5 V low dropout voltage regulator Datasheet − production data Features Max DC supply voltage VS 40 V Max output voltage tolerance ΔVo +/-2% Max dropout voltage Vdp 500 mV Io 150 mA Iqn 5 µA 1 55 µA(2) Output current Quiescent current 1. Typical value with regulator disabled.

Contextual Info: M68AW031AL 256 Kbit 32K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 32K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 70ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

M48T35

Abstract: STMicroelectronics
Contextual Info: M48T35 M48T35Y 5 V, 256 Kbit 32 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

EMIF06-SD02F3

Abstract: AN1751 AN2348
Contextual Info: EMIF06-SD02F3 IPAD 6 line EMI filter and ESD protection for SD card Data Brief Main application • Removable memory cards in mobile phones, communication systems, and portable applications ■ Compliant with: SD standard and high speed /MiniSD/ µSD and MMC/Trans-flash standards

128 dual modulus prescaler 2ghz

Abstract: smd transistor code 43 B6 vco 6ghz 3700BL15B100 E5052A STW81102 STW81102AT STW81102ATR VFQFPN28
Contextual Info: STW81102 Multi-band RF frequency synthesizer with integrated VCOs Feature summary • Integer-N Frequency Synthesizer ■ Dual differential integrated VCOs with automatic center frequency calibration: – 3000 - 3620 MHz Direct output – 4000 - 4650 MHz (Direct output)

4.4GHz VCO

Abstract: STW81101ATR 3300MHz-3900MHz FIXED DIVIDER BY 20 STW81101 3700BL15B100 E5052A STW81101AT VFQFPN28 65551
Contextual Info: STW81101 Multi-band RF frequency synthesizer with integrated VCOs Preliminary Data Feature summary • Integer-N Frequency Synthesizer ■ Dual differential integrated VCOs with automatic center frequency calibration: – 3300 - 3900 MHz Direct output – 3800 - 4400 MHz (Direct output)

erni relay

Abstract: schematic diagram online UPS UPS sinus schematic UM0036 USB Prog ISP 172 project on circuit diagram online UPS relay ERNI window comparator STM8 CPU programming manual schematic diagram plotter
Contextual Info: UM0036 User Manual ST Visual Develop STVD Introduction Welcome to ST Visual Develop (STVD). STVD is a powerful, integrated development environment for ST microcontrollers. This Windows-based environment provides interfaces for all phases of application development, from building and debugging your application, to

SPC560

Abstract: sdc 7500 sdc 7500 pwm control mc306 crystal 12,000 MHz Crystal oscillator SPC560 MIPS SPC560B40L3 ic lm 7500 SPC560B40 C 12 PH diode
Contextual Info: SPC560B40x, SPC560B44x, SPC560B50x SPC560C40x, SPC560C44x, SPC560C50x 32-bit MCU family built on the Power Architecture embedded category for automotive body electronics applications Preliminary data Features • High-performance 64 MHz e200z0h CPU – 32-bit Power Architecture™ Book E CPU

STM8L151G

Abstract: STM8L151R6 STM8AF6226 STM8L152R6 STM8L151C8 STM8L151K STM8S208 STM8L151R8 STM8S208c6 52A8
Contextual Info: RN0013 Release notes ST Visual Develop STVD release 4.2.0 Introduction These are the release notes for release 4.2.0 of the ST integrated development environment, which is now called ST Visual Develop and abbreviated to STVD. The name change from STVD7 to STVD reflects the extension of the development environment to

Contextual Info: M41T00AUD Serial real-time clock RTC with audio Features Combination real-time clock with audio • Serial real-time clock (RTC) based on M41T00 ■ Audio section provides: – 300 mW differential audio amplifier – 256 and 512 Hz tone generation – –33 to +12 dB gain, 3 dB steps (16 steps

K 2411 equivalent

Abstract: M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

STP9NM60N

Abstract: STF9NM60 F9NM60N STD9NM60N STX9
Contextual Info: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N

STLM75

Abstract: LM75B DS75 LM75
Contextual Info: STLM75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current: 125 µA (typ) ■ No external components required

TSM108

Contextual Info: STEVAL-ISA059V1 DC-DC converter demonstration board based on the TSM108 Data Brief Features • Input voltage: Vin = 12 V ■ Output voltage: Vout = 6 V ■ Maximum output current: Iout = 800 mA Description The typical application implemented in this demonstration board, based on the TSM108, is a

200V AUTOMOTIVE MOSFET

Abstract: 30NF20 JESD97 STP30NF20 STW30NF20
Contextual Info: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■

Contextual Info: STS9D8NH3LL Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET Power MOSFET Features Type STS9D8NH3LL VDSS RDS on Qg ID Q1 30V < 0.022Ω 7nC 8A Q2 30V < 0.015Ω 8nC 9A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced

Contextual Info: STGW30NC60WD 30 A, 600 V ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls, inverters, UPS

J-STD-020B

Abstract: M68AF031A PDIP28
Contextual Info: M68AF031A 256 Kbit 32K x 8 5.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 4.5 to 5.5V 32K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55, 70ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O