06FI Search Results

DD 127 D TRANSISTOR

Abstract: JIS B 0409
Contextual Info: *57 TYPE STP30N06 06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

stp60n06

Contextual Info: SGS-THOMSON £ j ï ULKgraMOeS STP60N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 06 STP60N 06FI V dss RDS on Id 60 V 60 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED

Contextual Info: *57 SGS-THOMSON s tp 2 5 n o6 ilLiCTIIMDe STP25N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N 06 S TP25N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.065 a < 0.065 a 25 A 16 A T Y P IC A L RDS(on) = 0.048 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

TP20N

Contextual Info: *57 SGS-THOMSON s t p 2 on o6 ilLiCTIKMDe STP20N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N 06 S TP20N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.085 a < 0.085 a 20 A 13 A T Y P IC A L RDS(on) = 0.06 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

STP55N06

Abstract: BS103 TRANSISTOR BH RW r5541
Contextual Info: STP55N06 06FI SGS-THOMSON * t iLiCcM [MO gS J N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S TP55N 06 S TP 55N 06FI . . . . . . . . . dss 60 V 60 V R D S (o n Id 0 .0 2 3 £2 0 .0 2 3 « 55 A 30 A AVALANC HE RUG G EDN ESS TECHNO LO GY

Contextual Info: w SGS-THOMSON TYPE STP50N 06 STP50N 06FI . . . . . . m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V d ss RDS on Id 60 V 0 .0 2 8 U 0 .0 2 8 « 50 A 27 A 60 V AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANCHE DATA AT 100°C

20N06

Contextual Info: SGS-THOMSON STP20N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP20N 06 STP20N 06FI V dss R DS on Id 60 V 60 V 0 .0 9 £2 0 .0 9 £2 20 A 13 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

10N06

Abstract: D10N06 diode gc6
Contextual Info: S G S -T H O M Î 7 S O N V N D 1 0 N 0 6 /V N D 1 0 N 0 6 -1 ilL Ifê T O O T O iS S V N P 1 0 N 0 6 F I / K 1 0 N 0 6 F M ’’OMNIFET’: FULLY AUTOPROTECTED POWER MOSFET TY P E VN D 10N06 VND10N06-1 VN P 10N 06FI VNK 10N06FM . . . • . . . . . Vclamp

OT 306

Contextual Info: *57 SGS-THOMSON s t p 3 6 n o6 STP36N 06FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0 .0 4 a < 0 .0 4 a 36 A 21 A T Y P IC A L RDS(on) = 0.03 Q A V A LA N C H E R U G G ED T E C H N O LO G Y

7WE37

Abstract: L0250 STP40N06 STP40N06FI V1068
Contextual Info: 7TETE37 QQ4hM7b Q7*\ » S f i T H STP40N06 06FI ¡ ñ l SGS-THOMSON ilLiOT «! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP40N06 STP40N 06FI R oS o n Id < 0.035 n < 0.035 n 40 A 23 A dss 60 V 60 V . Q . TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: P I SGS-TUOMSON STP30N06 06FI I1LìI O T 2 *S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N 06FI V dss RoS(on 60 V 60 V 0.05 0.05 n il Id 30 A 18 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

TP50N06V

Contextual Info: SGS-THOMSON ï ULKgraMOeS £j STP50N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP50N 06 STP50N 06FI . . . . . . . . V dss RDS on Id 60 V 60 V < 0.0 2 8 Q. < 0.0 2 8 Q. 50 A 27 A TYPICAL R DS(on) = 0.022 Q. AVALANCHE RUGGED TECHNOLOGY

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

Contextual Info: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version

Contextual Info: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version

Contextual Info: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T P 20 N06 s t p 2 0 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP20N06 S 06FI V dss RDS on Id 60 V 60 V < 0 .085 Q. < 0 .085 Q. 20 A 13 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY

transistor tc 144

Contextual Info: ¿57 TYP E STP36N06 S 06FI S G S -T H O M S O N ¡U È T O « S T P 36 N06 S T P 3 6 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: Product catalogue | PCB connection systems | PCB plug-in connectors | Pitch 7.62 mm 0.300 inch - SV/BV | Male connectors, clamping yoke connection, pitch 7.62 | SVZ 7.62HP 180 | SVZ 7.62HP 180FI SN General ordering data Order No. Part designation Version

STH75N06

Abstract: STW75N06
Contextual Info: ¿57 TYP E S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V STH75N06 06FI STH75N06 S T H 7 5 N 0 6 /F I S T W 7 5 N 06 dss 60 V 60 V 60 V R DS on Id < 0.014 a < 0.014 a < 0 .014 Q. 75 A 48 A 75 A . TYPICAL R DS(on) = 0.011 Q

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP30N06 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S 06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: * 5 S T P 1 9 N06 S T P 1 9 N 0 6 FI S G S -T H O M S O N ULKgraMOeS 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP19N06 S 06FI dss R D S o n Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T P 25 N06 S T P 2 5 N 0 6 FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP25N06 S 06FI dss 60 V 60 V R DS on Id < 0.065 Q. < 0.065 Q. 25 A 16 A . TYPICAL RDs(on) = 0.048 Q . AVALANCHE RUGGED TECHNOLOGY