06DEC2005 Search Results

Contextual Info: M29KW032E 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V

Contextual Info: M59PW016 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

23NOV2004

Abstract: STIL04-P5 STIL04-T5 STIL06-T5 STIL08-T5 resistor AC INRUSH CURRENT LIMITER
Contextual Info: STIL AC INRUSH CURRENT LIMITER ASD APPLICATIONS TAB • ■ ■ ■ ■ High power density switching power supply Server and Telecom power supplies Game station power supplies High end TV displays Portable equipment adaptators 5 23 ■ ■ ■ ■ Replaces two diodes of the bridge in steady

Contextual Info: M29KW016E 16 Mbit 1Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Read Figure 1. Packages – VPP = 11.4V to 12.6V for Program and Erase ■ ■ ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V

Contextual Info: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

Contextual Info: M27W064 64 Mbit 4Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

Contextual Info: M59PW032 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

Contextual Info: M29KW064E 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC= 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V

Contextual Info: EVERLIGHTELECTRONICS CO.,LTD. Technical Data Sheet TOP View LEDs Preliminary 67-31B SURC/S833/TR8 Features ˙PLCC-2 package. ˙High flux output. ˙High current capability. ˙White package. ˙Optical indicator. ˙Colorless clear window. ˙Ideal for backlight and light pipe application.

Contextual Info: M59PW1282 128Mbit two 64Mb, x16, Uniform Block, LightFlash 3V Supply, Multiple Memory Product NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE TWO 64 Mbit LightFlash™ MEMORIES STACKED IN A SINGLE PACKAGE

Contextual Info: M27W016 16 Mbit 1Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 80ns at VCC = 3.0 to 3.6V

W30NM60

Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage

A0-A21

Abstract: M36W0R6050B1 M36W0R6050T1
Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

Numonyx

Abstract: A0-A21 M36W0R6050B1 M36W0R6050T1
Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

T-019

Abstract: T019
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. FT DIST R E V IS IO N S LTR A1 DESCRIPTION DATE / REVISED PER E C Q - 0 6 - 2 5 2 7 2 6 /0 6 DWN APVD SS CR MATERIALS: HOUSING: POLYAMIDE 66, U L 9 4 V - 0 , GREEN.

AC INRUSH CURRENT 1000A LIMITER

Abstract: AC INRUSH CURRENT LIMITER 23NOV2004 STIL06-T5 STIL04-P5 STIL04-T5 STIL08-T5 resistor AC INRUSH CURRENT LIMITER Inrush Current Limitation Device for Off-Line Power
Contextual Info: STIL AC INRUSH CURRENT LIMITER ASD APPLICATIONS TAB High power density switching power supply Server and Telecom power supplies Game station power supplies High end TV displays Portable equipment adaptators • ■ ■ ■ ■ 5 23 ■ ■ ■ TAB BENEFITS

Contextual Info: M59PW064 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ MASK-ROM PIN-OUT COMPATIBLE SUPPLY VOLTAGE – VCC= 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program

TSOP48 outline

Contextual Info: M27W016 16 Mbit 1Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 80ns at VCC = 3.0 to 3.6V

Contextual Info: M27W064 64 Mbit 4Mb x16 3V Supply FlexibleROM Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

STW30NM60D

Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Contextual Info: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge

RFID loop antenna 13.56MHz spiral

Abstract: RFID loop antenna 13.56MHz Round loop antenna for 13.56MHz RFID loop antenna RFID loop antenna 13.56MHz coil planar spiral coil wurth 742 792 04 18 13.56MHz Reader antenna designing 13.56MHZ RFID matching AN1806
Contextual Info: AN1806 APPLICATION NOTE Antenna and Associated Components Matching-Circuit Calculation for the CRX14 Coupler In the basic RFID system (as shown in Figure 1): 1. The Reader generates an electromagnetic field. This field is rectified to generate the supply voltage inside the Tag.

STW30NM60D

Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

Contextual Info: STIL AC INRUSH CURRENT LIMITER ASD APPLICATIONS TAB • ■ High power density switching power supply Server and Telecom power supplies Game station power supplies High end TV displays Portable equipment adaptators s t c u d o ) r s ( P t c e t u e