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    065N15N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB065N15N3GATMA1

    Transistor: N-MOSFET; unipolar; 150V; 130A; 300W; PG-TO263-3
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    TME IPB065N15N3GATMA1 1,000
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    Avnet Americas IPB065N15N3GATMA1 Tape & Reel 52 Weeks 1,000
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    • 1000 $2.45
    • 10000 $2.34
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    Newark () IPB065N15N3GATMA1 Cut Tape 1
    • 1 $7.24
    • 10 $3.89
    • 100 $3.56
    • 1000 $3.16
    • 10000 $3.03
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    IPB065N15N3GATMA1 Tape & Reel 100
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    Rochester Electronics IPB065N15N3GATMA1 2 1
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    • 100 $2.76
    • 1000 $2.47
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    NexGen Digital IPB065N15N3GATMA1 4,896
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    EBV Elektronik IPB065N15N3GATMA1 53 Weeks 1,000
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    Win Source Electronics IPB065N15N3GATMA1 98
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    • 10 $6.95
    • 100 $4.64
    • 1000 $4.64
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    Infineon Technologies AG IPB065N15N3G

    Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) D2PAK T/R
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    Bristol Electronics IPB065N15N3G 275 1
    • 1 $4.33
    • 10 $2.82
    • 100 $2.04
    • 1000 $1.86
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    Win Source Electronics IPB065N15N3G 2,637
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    • 100 $4.64
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    Infineon Technologies AG IPB065N15N3GE8187ATMA1

    (Alt: SP000939336)
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    EBV Elektronik IPB065N15N3GE8187ATMA1 21 Weeks 1
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    065N15N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    065N15N

    Abstract: IPB065N15N3 IEC61249-2-21 JESD22 IPB065N15N3 G IPB065N15N3G PG-TO263-7
    Contextual Info: 065N15N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 150 V R DS(on),max (TO263) 6.5 mΩ ID 130 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		ipb065n15n3iec61249-2-21pg-to263-7065n15n+3jesd22ipb065n15n3 gipb065n15n3g PDF