0600Z Search Results

Contextual Info: HRW0702A Silicon Schottky Barrier Diode for Rectifying REJ03G0159-0600Z Previous: ADE-208-109E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HVM187WK

Contextual Info: HVM187WK Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0116-0600Z Previous: ADE-208-056E Rev.6.00 Oct.08.2003 Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HRW0702A Silicon Schottky Barrier Diode for Rectifying REJ03G0159-0600Z Previous: ADE-208-109E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) REJ03C0148-0600Z Rev. 6.00 Oct. 26. 2006 Description Renesas Technology's HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability

Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0157-0600Z Previous: ADE-208-108E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVR100 Variable Capacitance Diode for AM tuner REJ03G0102-0600Z Previous: ADE-208-079EA Rev.6.00 Sep.29.2003 Features • High capacitance ratio. (n = 16.0 min) • High figure of merit. (Q = 200 min) • To be usable at low voltage. • Small Resin Package (SRP) is suitable for surface mount design.

HRW0202A

Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying REJ03G0152-0600Z Previous: ADE-208-209E Rev.6.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

HFBR1602

Abstract: HFBR-1602Z HFBR-1604Z HFBR-2602Z
Contextual Info: HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers Data Sheet SERCOS Features SERCOS is a SErial Realtime COmmunication System, a standard digital interface for communication between controls and drives for numerically controlled machines. The SERCOS interface specification was written by a

HSM88AS

Contextual Info: HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0135-0600Z Previous: ADE-208-046E Rev.6.00 Nov.06.2003 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

HRW0703A

Contextual Info: HRW0703A Silicon Schottky Barrier Diode for Rectifying REJ03G0160-0600Z Previous: ADE-208-110E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) REJ03C0148-0600Z Rev. 6.00 Oct. 26. 2006 Description Renesas Technology's HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability

Contextual Info: HRW0202A Silicon Schottky Barrier Diode for Rectifying REJ03G0152-0600Z Previous: ADE-208-209E Rev.6.00 Dec.15.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HSM88AS Silicon Schottky Barrier Diode for Balanced Mixer REJ03G0135-0600Z Previous: ADE-208-046E Rev.6.00 Nov.06.2003 Features • Proof against high voltage. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information

HFBR1604Z

Abstract: PT1602 HFBR-4401Z
Contextual Info: HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers Data Sheet SERCOS Features SERCOS is a Serial Realtime Communication System, a standard digital interface for communication between controls and drives for numerically controlled machines. The SERCOS interface specification was written by a joint

1/4-36 UNS-2A

Abstract: PT1602 receiver ir ic SERCOS TRANSISTOR 1602 "Fiber Optic Transmitters" HFBR-1602 HFBR1602 HFBR-1602Z HFBR-1604Z
Contextual Info: HFBR-0600Z Series SERCOS Fiber Optic Transmitters and Receivers Data Sheet SERCOS Features SERCOS is a SErial Realtime COmmunication System, a standard digital interface for communication between controls and drives for numerically controlled machines. The SERCOS interface specification was written by a

HRC0202A

Contextual Info: HRC0202A Silicon Schottky Barrier Diode for Rectifying REJ03G0147-0600Z Previous: ADE-208-210E Rev.6.00 Nov.26.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • CMPAK Package is suitable for high density surface mounting and high speed assembly.

HN58C256AP-85E

Abstract: HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-85 HN58C256AT-10E
Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) REJ03C0148-0600Z Rev. 6.00 Oct. 26. 2006 Description Renesas Technology's HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability

td 2003 ap

Abstract: H7N1004LD H7N1004LM H7N1004LS
Contextual Info: H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z Previous ADE-208-1552E(Z Rev.6.00 Aug.27.2003 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive

HZ5.6

Abstract: hz10bp HZ3.0
Contextual Info: HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter REJ03G0236-0600Z Previous: ADE-208-123E Rev.6.00 Apr 13, 2004 Features • Wide spectrum from 1.88 V through 40 V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability.

hat2168h

Contextual Info: HAT2168H Silicon N Channel Power MOS FET Power Switching REJ03G0046-0600Z Rev.6.00 Jun.02.2003 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.0 mΩ typ. (at VGS = 10 V)

HRW0502A

Contextual Info: HRW0502A Silicon Schottky Barrier Diode for Rectifying REJ03G0157-0600Z Previous: ADE-208-108E Rev.6.00 Jan.06.2004 Features • Low forward voltage drop and suitable for high efficiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM187WK Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0116-0600Z Previous: ADE-208-056E Rev.6.00 Oct.08.2003 Features • Low forward resistance. (rf = 5.5 Ω max) • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HD74LV1GT14ACME

Abstract: HD74LV1GT14AVSE HD74LV1GT14A marking up- RENESAS ADE-205-329D
Contextual Info: HD74LV1GT14A Inverter with Schmitt-trigger Input / CMOS Logic Level Shifter REJ03D0119–0600Z Previous ADE-205-329D (Z Rev.6.00 Sep.24.2003 Description The HD74LV1GT14A is high-speed CMOS schmitt-trigger inverter using silicon gate CMOS process. With CMOS low power dissipation, it provides high-speed equivalent to LS–TTL series. The internal