MBR3060CG
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AK Semiconductor
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30A surface mount Schottky barrier rectifier in TO-263 package with reverse voltage ratings from 40V to 200V, low forward voltage drop, high surge current capability up to 200A, and operating junction temperature up to 175°C. |
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MURF1060CT
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JCET Group
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MUR1060CT and MURF1060CT are super fast recovery rectifiers in a TO-220F package, with a 600 V peak repetitive reverse voltage, 10 A average rectified output current, 35 ns reverse recovery time, and 1.3 V typical forward voltage at 125 °C. |
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MUR2060CD
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CREATEK Microelectronics
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MUR2060CD is a fast recovery epitaxial diode in TO-220ABW package, with 600V peak repetitive reverse voltage, 10A average forward rectified current, 1.5V forward voltage at 10A, and 35ns reverse recovery time. |
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SF1060CT
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Microdiode Semiconductor
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Reverse Voltage: 100-600V, Forward Current: 10.0A, Low leakage, High surge, 250°C soldering, TO-220AB, 2.24g. |
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SF2060CT
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Microdiode Semiconductor
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100-600V, 20.0A, UL 94V-0, low leakage, high surge, 250°C, TO-220AB, 2.24g. |
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SBDF1060CT
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JCET Group
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SBD1060CT and SBDF1060CT are 60 V Schottky barrier rectifiers in TO-220-3L/TO-220F packages, with 10 A average rectified output current, low forward voltage drop of 0.56 V at 125°C, and non-repetitive surge current up to 120 A. |
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SBDB3060CT
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JCET Group
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SBDB3060CT Schottky barrier rectifier in TO-263-2L package features 60 V peak repetitive reverse voltage, 30 A average rectified output current, low forward voltage drop of 0.65 V at 125°C, and 200 A non-repetitive surge current capability. |
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SBDF2060CT
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JCET Group
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SBD2060CT and SBDF2060CT Schottky barrier rectifiers feature 60V reverse voltage, 20A average rectified current, low forward voltage drop of 0.62V at 125°C, high surge current capability of 150A, and operating junction temperature up to 150°C. |
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SBDD2060CT
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JCET Group
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SBDD2060CT Schottky barrier rectifier with 60 V peak repetitive reverse voltage, 20 A average rectified output current, low forward voltage drop of 0.62 V at 125 °C, and 150 A non-repetitive peak forward surge current in a TO-252-2L package. |
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MUR1060CT
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JCET Group
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Super fast recovery rectifier diode MUR1060CT with 600 V peak repetitive reverse voltage, 10 A average rectified output current, 35 ns reverse recovery time, and 1.3 V typical forward voltage at 125 °C. |
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MUR1060C
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CREATEK Microelectronics
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Fast recovery epitaxial diode in TO-220ACW package with 600 V peak repetitive reverse voltage, 10 A average forward rectified current, 1.6 V forward voltage at 10 A, and 35 ns reverse recovery time. |
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SBDF3060CT
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JCET Group
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SBD3060CT and SBDF3060CT Schottky barrier rectifiers feature 60 V reverse voltage, 30 A average rectified current, low forward voltage drop of 0.65 V at 125°C, and surge current capability of 200 A, housed in TO-220-3L/TO-220F packages. |
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SBD2060CT
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JCET Group
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SBD2060CT and SBDF2060CT Schottky barrier rectifiers feature 60 V reverse voltage, 20 A average rectified current, low forward voltage drop of 0.62 V at 125°C, and 150 A non-repetitive surge current in a TO-220-3L/TO-220F package. |
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MBR1060CG
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AK Semiconductor
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Surface mount Schottky barrier rectifier in TO-263 package with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 100A. |
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SBDD1060CT
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JCET Group
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Schottky barrier rectifier diode SBDD1060CT in TO-252-2L package, 60 V peak repetitive reverse voltage, 10 A average rectified output current, low forward voltage drop of 0.56 V at 125°C, suitable for high-efficiency power applications. |
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MBR2060CG
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AK Semiconductor
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Surface Mount Schottky Barrier Rectifier in TO-263 package with reverse voltage ratings from 40V to 200V, forward current up to 20A, low forward voltage drop, and high surge current capability of 150A. |
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