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06-T001
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NTE Electronics
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TNC CRIMP PLUG FOR RG-59/62 CABL |
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34.53KB |
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06-T002
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NTE Electronics
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TNC CRIMP PLUG FOR RG-58/58A/141 |
Original |
PDF
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32.45KB |
1 |
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06-T004
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NTE Electronics
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TNC REVERSE POLARITY CRIMP PLUG |
Original |
PDF
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32.61KB |
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06-T005
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NTE Electronics
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TNC PLUG TO JACK R/A ADAPTER |
Original |
PDF
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30.36KB |
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06TDPS6
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Delta Electronics
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Filters - Power Line Filter Modules - LINE FILTER 6A CHASSIS MOUNT |
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690.82KB |
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06TDPS6(D)
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Delta Electronics
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Filters - Power Line Filter Modules - LINE FILTER 6A DIN RAIL |
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690.82KB |
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06T-JWPF-VSLE-D
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JST Manufacturing
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Cconnector HOUSING TAB JWPF 6POS 2MM |
Original |
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454.72KB |
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SDA06T1
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Leiditech
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SDA06T1 unidirectional TVS diode with 5V operating voltage, ultra low leakage in nA range, SOD-523 package, 200W peak pulse power (8/20 µs), and ±15kV ESD protection per IEC 61000-4-2. |
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SLD05P06T
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Maplesemi
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P-Channel 60V -5A MOSFET with RDS(on) of 82mΩ at VGS = -10V, featuring low on-resistance, fast switching, and 100% avalanche tested performance in a TO-252 package. |
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SLM50N06T
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Maplesemi
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60V N-Channel MOSFET with 50A continuous drain current, 14.8mΩ typical RDS(on) at VGS = 10V, low gate charge of 27.2nC, and 100% avalanche tested for high ruggedness and fast switching performance. |
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JECR7506TL
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Jiangsu JieJie Microelectronics Co Ltd
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EPI hyperfast soft recovery rectifier in TOLL package with 600V maximum repetitive peak reverse voltage, 75A average forward current, low reverse leakage, and hyperfast recovery time for applications in UPS, EV chargers, welding machines, and air conditioners. |
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SLF80P06T
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Maplesemi
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P-Channel MOSFET SLF80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, TO-220F package, suitable for power management and load switching applications. |
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SL3906T
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SLKOR
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SLB80N06T
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Maplesemi
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N-channel MOSFET, 60V, 80A continuous drain current, 6.5 mΩ typical RDS(on) at 10V VGS, TO-263 package, designed for high-efficiency power switching applications with low gate charge and fast switching performance. |
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MMBT3906T
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AK Semiconductor
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PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and hFE ranging from 60 to 300, suitable for general-purpose switching and amplification applications. |
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MMBT3906T
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Shikues Semiconductor
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Epitaxial Planar Die, Complementary NPN, Lead Free Version, MARKING:2A |
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SLM80P06T
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Maplesemi
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P-Channel MOSFET SLM80P06T with -60V drain-source voltage, -80A continuous drain current, 17mΩ typical RDS(on) at VGS = -10V, and 100W power dissipation in a DFN5x6 package. |
Original |
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SLD120N06T
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Maplesemi
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60V N-Channel MOSFET with 120A continuous drain current, 4.2mΩ typical RDS(on) at VGS = 10V, low gate charge, and fast switching performance in a D-Pak package. |
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2N3906-TA
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JCET Group
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PNP silicon epitaxial planar transistor in TO-92 package, rated for 40 V collector-base and collector-emitter breakdown voltage, with a DC current gain up to 400 and transition frequency of 250 MHz. |
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SDA06T1
