05OCT2012 Search Results

Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT - 2 3 1 - LOC BY - REVISIONS DIST H ALL RIGHTS RESERVED. - P LTR DESCRIPTION A INITIAL RELEASE A1 'X' # 0,1 A2 9,35 DATE APVD 06SEP12 SS RRP ECR-12-017404 05OCT2012 SS RRP REV PER ECR-14-007496

M39016/6-209L

Contextual Info: JMAPD-12XL Product Details - TE Page 1 of 1 TE Connectivity My Cart | My Part Lists | Sign In/Register What can we help you find? Products Industries Resources About TE Support Center JMAPD-12XL Product Details Not EU RoHS or ELV Compliant Product Highlights:

Contextual Info: STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS STL100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance

100N10F7

Contextual Info: STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet — preliminary data Features TAB Type VDSS RDS on max 100 V 0.008 Ω STD100N10F7 STF100N10F7

STEVALIKRV001V4

Abstract: EN-13757-4 spirit1 EN-13757 pckc EN13757-4 EN137574 922MHz RSSI energy date code krm murata
Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet - production data • Wake-up on internal timer and wake-up on external event • Flexible packet length with dynamic payload length • Sync word detection • Address check QFN20 • Automatic CRC handling

Contextual Info: STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 2 Order code VDSS STL100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 3 4 • Ultra low on-resistance

Contextual Info: VNQ6004SA-E Quad-channel high-side driver with 16-bit SPI interface Datasheet - production data – Reverse battery protected through power outputs self turn-on no external components – Load dump protected – Protection against loss of ground PSSO36 Description

uFdFpN

Abstract: M24C16-R marking
Contextual Info: M24C16-W M24C16-R M24C16-F 16-Kbit serial I²C bus EEPROM Datasheet - production data Features TSSOP8 DW 169 mil width SO8 (MN) 150 mil width • Compatible with all I2C bus modes: – 400 kHz – 100 kHz • Memory array: – 16 Kbit (2 Kbytes) of EEPROM

TDA7576

Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet  production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4  @ 24 V, 1 kHz; 10 %

Contextual Info: M24C16-W M24C16-R M24C16-F 16-Kbit serial I²C bus EEPROM Datasheet - production data Features TSSOP8 DW 169 mil width SO8 (MN) 150 mil width PDIP8 (BN) • Compatible with all I2C bus modes: – 400 kHz – 100 kHz • Memory array: – 16 Kbit (2 Kbytes) of EEPROM

stth100w06

Abstract: STTH100W06CW tig welding machine
Contextual Info: STTH100W06C Turbo 2 ultrafast high voltage rectifier Datasheet  production data Features A2 • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ ECOPACK 2 compliant component ■ Ribbon bonding for more robustness

EN-13757-4

Abstract: ook deMODULATOR ghz receiver pll 169mhz spirit1 EN13757-4 wm-bus EN-13757 22851 EN137574 wireless encrypt
Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet — production data Features • Frequency bands: 150-174 MHz, 300-348 MHz, 387-470 MHz, 779-956 MHz ■ Modulation schemes: 2-FSK, GFSK, MSK, GMSK, OOK, and ASK ■ Air data rate from 1 to 500 kbps

Contextual Info: B120H thru B1200H Surface Mount Schottky Barrier Rectifiers P b Lead Pb -Free Features: * Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance * Low profile surface mounted application in order to optimize board space

STTH200W06TV1

Abstract: tig welding
Contextual Info: STTH200W06TV1 Turbo 2 ultrafast high voltage rectifier Datasheet  production data Features • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Insulated package – Insulating voltage = 2500 V rms

Contextual Info: STD830CP40 Complementary transistor pair in a single package Datasheet — production data Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 1 Application ■ Compact fluorescent lamp (CFL) 220 V mains

Contextual Info: 2N3019HR Hi-Rel NPN bipolar transistor 80 V, 1 A Datasheet — production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

TDA7576B

Abstract: TDA7576
Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %

STEVALIKRV001V4

Contextual Info: SPIRIT1 Low data rate, low power sub-1GHZ transceiver Datasheet - production data • Wake-up on internal timer and wake-up on external event • Flexible packet length with dynamic payload length • Sync word detection • Address check QFN20 • Automatic CRC handling

Contextual Info: VNQ6004SA-E Quad-channel high-side driver with 16-bit SPI interface Datasheet − production data Features Channel VCC RON typ ILIMH(min) 0–1 28 V 30 mΩ 25 A 2–3 28 V 10 mΩ 55 A PSSO36 Description • ■ ■ General – 16-bit ST-SPI for full and diagnostic

Contextual Info: STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB 3 Order codes 1 3 VDS RDS on max ID PTOT 80 A

Contextual Info: B220H thru B2200H Surface Mount Schottky Barrier Rectifiers P b Lead Pb -Free REVERSE VOLTAGE 20 TO 200 VOLTS FORWARD CURRENT 2.0 AMPERES Features: better reverse leakage current and thermal resistance optimize board space * Tiny plastic SMD package * High current capability, low forward voltage drop

STTH100W04CW

Abstract: stth100w04 STTH100W04C
Contextual Info: STTH100W04C Turbo 2 ultrafast high voltage rectifier Datasheet  production data Features • A2 Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ ECOPACK 2 compliant component ■ Ribbon bonding for more robustness

M24C16-R marking

Contextual Info: M24C16-W M24C16-R M24C16-F 16-Kbit serial I²C bus EEPROM Datasheet  production data Features • Compatible with all I2C bus modes: – 400 kHz – 100 kHz ■ Memory array: – 16 Kbit 2 Kbytes of EEPROM – Page size: 16 bytes ■ Single supply voltage:

VNQ6004

Abstract: VNQ6004SA-E VNQ6004SA VNQ600 VNQ6004S
Contextual Info: VNQ6004SA-E Quad-channel high-side driver with 16-bit SPI interface Datasheet − production data Features Channel VCC RON typ ILIMH(min) 0–1 28 V 30 mΩ 25 A 2–3 28 V 10 mΩ 55 A PSSO36 Description • ■ ■ General – 16-bit ST-SPI for full and diagnostic