05N10 Search Results
05N10 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
SK05N10A
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Shikues Semiconductor | Advanced trench tech, low gate charge, high density cell, excellent heat dissipation, power switching, UPS. | Original | ||||
HKT05N10
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Shenzhen Heketai Electronics Co Ltd | N-channel high voltage MOSFET with 100 V drain-source voltage, 5 A continuous drain current, 115 mΩ on-resistance at VGS=10V, and low input capacitance in SOT-23-3L surface mount package. | Original | ||||
SL05N10A
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SLKOR | Original | |||||
NM0805N101J251CPBN
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Hui Ju (Capacitors) | Multilayer ceramic capacitor, NM Series, mid-voltage, rated 100V to 630V, available in various case sizes with X7R and C0G dielectrics, lead-free termination, RoHS compliant. | Original | ||||
CJQ05N10
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JCET Group | Dual N-Channel MOSFET with 100V drain-source voltage, 5A continuous drain current, 140mΩ typical RDS(on) at 10V VGS, low gate charge, and SOP8 package for high-frequency switching applications. | Original |
05N10 Price and Stock
Walsin Technology Corporation 0805N101J500CTCAP CER 100PF 50V C0G/NP0 0805 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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0805N101J500CT | Cut Tape | 28,690 | 1 |
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0805N101J500CT | 20,000 | 4,000 |
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Susumu Co Ltd RG1005N-103-B-T5RES SMD 10K OHM 0.1% 1/16W 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RG1005N-103-B-T5 | Cut Tape | 10,731 | 1 |
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RG1005N-103-B-T5 | 24,184 |
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Susumu Co Ltd RG1005N-103-W-T5RES SMD 10K OHM 0.05% 1/16W 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RG1005N-103-W-T5 | Digi-Reel | 5,809 | 1 |
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RG1005N-103-W-T5 | 21,242 |
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RG1005N-103-W-T5 | 1 |
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onsemi NTMFS005N10MCLT1GSINGLE N-CHANNEL POWER MOSFET 10 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTMFS005N10MCLT1G | Cut Tape | 2,810 | 1 |
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NTMFS005N10MCLT1G | Tape & Reel | 20 Weeks | 1,500 |
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NTMFS005N10MCLT1G | 3,352 |
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NTMFS005N10MCLT1G | Cut Tape | 1,444 | 1 |
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NTMFS005N10MCLT1G | 201 |
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NTMFS005N10MCLT1G | 1 |
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NTMFS005N10MCLT1G | 20 Weeks | 1,500 |
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NTMFS005N10MCLT1G | 21 Weeks | 1,500 |
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NTMFS005N10MCLT1G | 22 Weeks | 1,500 |
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NTMFS005N10MCLT1G | 3,000 |
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NTMFS005N10MCLT1G | 12 | 1 |
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NTMFS005N10MCLT1G | 3,500 |
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Passive Plus Inc 0805N101FW251XCAP CER 100PF 250V C0G/NP0 0805 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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0805N101FW251X | Cut Tape | 790 | 1 |
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05N10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
siemens i
Abstract: 05N100
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Original |
05N100 O-220AB O-263 siemens i | |
high voltage mosfet n-channelContextual Info: Advanced Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 |
Original |
05N100 750mA O-220AB O-263 high voltage mosfet n-channel | |
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Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 |
Original |
05N100 O-220AB O-263 | |
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Contextual Info: Advance Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 |
Original |
05N100 750mA O-263 O-220AB | |
Triac bt 808 600C
Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
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Original |
element-14 Triac bt 808 600C w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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Original |
CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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Original |
MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
SID05N10
Abstract: MosFET 05n10
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Original |
SID05N10 O-251 SID05N10 O-251 05N10 40nction 300us, 26-Dec-2011 MosFET 05n10 |