05N10 Search Results
05N10 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SK05N10A | Shikues Semiconductor | Advanced trench tech, low gate charge, high density cell, excellent heat dissipation, power switching, UPS. | Original | ||||
SL05N10A | SLKOR | Original |
05N10 Price and Stock
Susumu Co Ltd RG1005N-103-B-T5RES SMD 10K OHM 0.1% 1/16W 0402 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RG1005N-103-B-T5 | Digi-Reel | 3,993 | 1 |
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RG1005N-103-B-T5 | 24,754 |
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Walsin Technology Corporation 0805N102J201CTCAP CER 1000PF 200V C0G/NP0 0805 |
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0805N102J201CT | Digi-Reel | 3,473 | 1 |
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Goford Semiconductor GT105N10KMOSFET, N-CH, 100V,60A,TO-252 |
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GT105N10K | Digi-Reel | 2,418 | 1 |
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Susumu Co Ltd RG1005N-103-W-T1RES SMD 10K OHM 0.05% 1/16W 0402 |
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RG1005N-103-W-T1 | Digi-Reel | 1,971 | 1 |
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Walsin Technology Corporation 0805N103F500CTCAP CER 10000PF 50V C0G/NP0 0805 |
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0805N103F500CT | Digi-Reel | 1,597 | 1 |
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0805N103F500CT | 3,000 |
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05N10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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siemens i
Abstract: 05N100
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05N100 O-220AB O-263 siemens i | |
high voltage mosfet n-channelContextual Info: Advanced Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 |
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05N100 750mA O-220AB O-263 high voltage mosfet n-channel | |
Contextual Info: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 |
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05N100 O-220AB O-263 | |
Contextual Info: Advance Technical Information High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 |
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05N100 750mA O-263 O-220AB | |
Triac bt 808 600C
Abstract: w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a
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element-14 Triac bt 808 600C w2a smd transistor omron 8567 21EN15T044 awm 2919 pinout cable specification HT 25-19 transistor movement sensor pir cd 208 Ultrasonic Atomizing Transducer Balluff ROTARY ENCODER jhd 16a | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
SID05N10
Abstract: MosFET 05n10
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SID05N10 O-251 SID05N10 O-251 05N10 40nction 300us, 26-Dec-2011 MosFET 05n10 |