05MAY2010 Search Results

4n62k

Abstract: 4N62 STF4N62K3 STFI4N62K3 i-pak Package zener diode 4N62K3
Contextual Info: STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3

LFXX

Contextual Info: LFXX Very low drop voltage regulator with inhibit function Datasheet - production data Description TO-220 TO-220FP PPAK DPAK Features • Very low-dropout voltage 0.45 V • Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) • Output current up to 500 mA

LF50CDT-TRY

Abstract: transistor lf33cv AEC-Q100 LF15AB LF18AB LF18C LF25AB LF25C LF33AB LF33C
Contextual Info: LFxxAB LFxxC Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown

Contextual Info: TH I S DRAW I NG IS C OP Y R I G H T UNPUBLI S H E D . RELEASED BY 20 TYCO ELECTRONICS CORPORATION F OR ALL 20 P U B L I C A T I ON R IGHTS LOC RESERVED. REV I SI ONS D I ST FT DESCRIPTION C3 A -MATI NG R E V I S E D PER ECO-1 0 - 0 0 9 3 7 9 10.5 3-284506-0

c16tj

Abstract: SO20 VNQ860-E VNQ860SP-E
Contextual Info: VNQ860-E VNQ860SP-E Quad channel high side driver Features Type RDS on (1) Iout VCC VNQ860-E VNQ860SP-E 270 mΩ 0.25 A 36 V 1. Per each channel SO 20 • CMOS compatible I/Os ■ Undervoltage and overvoltage shutdown ■ Shorted load protection ■ Thermal shutdown

Contextual Info: TH IS IT L OG A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C HANG E AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U LD BE C ON T A C T E D FOR THE L A T E S T R E V I S I O N .

Contextual Info: STG3692 Low voltage high bandwidth quad SPDT switch Features • Ultra low power dissipation: – ICC = 0.2 µA max. at TA = 85 °C ■ Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V ■

4N62K3

Abstract: STD4N62K3
Contextual Info: STD4N62K3 STU4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3 Power MOSFET DPAK, IPAK Preliminary data Features Type STD4N62K3 STU4N62K3 VDSS RDS on max ID Pw 620 V < 1.95 Ω 3.8 A 70 W 3 3 2 1 • 100% avalanche tested ■ Extremely high dv/dt capability

4n62k

Contextual Info: STF4N62K3, STI4N62K3 STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET TO-220FP, IPAK, TO-220, I²PAK Features Order codes VDSS RDS on max ID Pw 3.8 A 25 W 70 W 70 W 70 W 3 STF4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 620 V <2Ω •

Contextual Info: LFxxAB LFxxC Very low drop voltage regulators with inhibit Datasheet − production data Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown

LF33CV

Abstract: transistor lf33cv AEC-Q100 LF15AB LF18AB LF18C LF25AB LF25C LF33AB LF33C
Contextual Info: LFxxAB LFxxC Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown

Contextual Info: TH IS IT L OG A C O N T R O L L E D D O C U M E N T FOR T Y C O E L E C T R O N I C S C O R P O R A T I O N TO C HANG E AND THE C O N T R O L L I N G E N G I N E E R I N G O R G A N I Z A T I O N S H O U LD BE C ON T A C T E D FOR THE L A T E S T R E V I S I O N .

LF33ABV-DG

Abstract: lf33cv
Contextual Info: LFxxAB LFxxC Very low drop voltage regulators with inhibit Datasheet − production data Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown

Contextual Info: STG3692 Low voltage high bandwidth quad SPDT switch Features • Ultra low power dissipation: – ICC = 0.2 µA max. at TA = 85 °C ■ Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V

4n62k

Abstract: 4N62K3 4N62 STF4N62K3
Contextual Info: STB4N62K3, STF4N62K3 STI4N62K3, STP4N62K3 N-channel 620 V, 1.8 Ω, 3.8 A SuperMESH3 Power MOSFET D2PAK, TO-220FP, I2PAK, TO-220 Preliminary data Features Type VDSS STB4N62K3 STF4N62K3 STI4N62K3 STP4N62K3 620 V RDS on max < 1.95 Ω ID Pw 3.8 A 70 W 25 W

Contextual Info: VNQ860-E, VNQ860SP-E Quad channel high-side driver Datasheet - production data • Shorted load protection • Thermal shutdown • Very low standby current • Protection against loss of ground PowerSO-10TM SO 20 Features Type RDS on (1) Iout VCC VNQ860-E

Contextual Info: LFxxAB LFxxC Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.45 V ■ Very low quiescent current (typ. 50 µA in OFF mode, 500 µA in ON mode) ■ Output current up to 500 mA ■ Logic-controlled electronic shutdown

st 70 2005 11

Abstract: SO20 VNQ860-E VNQ860SP-E
Contextual Info: VNQ860-E VNQ860SP-E Quad channel high side driver Features Type RDS on (1) Iout VCC VNQ860-E VNQ860SP-E 270 mΩ 0.25 A 36 V 1. Per each channel SO 20 • CMOS compatible I/Os ■ Undervoltage and overvoltage shutdown ■ Shorted load protection ■ Thermal shutdown

Contextual Info: STF4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET in TO-220FP, IPAK, TO-220, I²PAK packages Datasheet — production data Features TAB Order codes STF4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 VDSS RDS on max

STGW35HF60WD

Abstract: STGW35NC60WD AN3161
Contextual Info: AN3161 Application note Using the STGW35HF60WD advanced PT IGBT in parallel Introduction When two or more IGBTs are connected in parallel to improve the total efficiency in high output power systems, special care is required to ensure that current sharing between the