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05JUN09 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 4 \| \| TH IS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED FOR PUBLICATION 1 AUG .2006. LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. R E V ISIO N S DIST DW LTR P DESCRIPTIO N A DIM.A DATE OWN 05JUN09 R E V IS E D E C R — 09—013083 APVD	OCR Scan	05JUN09 182mm 600mm 590mm 603mm 371mm 240mm 31MAR2000	PDF
SOT-23 marking 352 MOSFET Abstract: WTC2305 MOSFET P-Channel sot-23 DSS SOT23 Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 Super High Dense Cell Design For Low R DS ON R DS(ON) <70m Ω@V GS =10V Rugged and Reliable *Simple Drive Requirement	Original	WTC2305 OT-23 OT-23 300us, 05-Jun-09 SOT-23 marking 352 MOSFET WTC2305 MOSFET P-Channel sot-23 DSS SOT23	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: 4 | | TH IS DRAWING IS UNPUBLISHED. COPYRIGHT - 3 RELEASED FOR PUBLICATION 1 AUG .2006. LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. R E V ISIO N S DIST DW LTR P DESCRIPTIO N A DIM.A DATE OWN 05JUN09 R E V IS E D E C R — 09—013083 APVD

OCR Scan

05JUN09 182mm 600mm 590mm 603mm 371mm 240mm 31MAR2000

PDF

SOT-23 marking 352 MOSFET

Abstract: WTC2305 MOSFET P-Channel sot-23 DSS SOT23
Contextual Info: WTC2305 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.2 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <70m Ω@V GS =10V *Rugged and Reliable *Simple Drive Requirement

Original

WTC2305 OT-23 OT-23 300us, 05-Jun-09 SOT-23 marking 352 MOSFET WTC2305 MOSFET P-Channel sot-23 DSS SOT23

PDF