05A7 Search Results

05A4

Abstract: 05A1 05A2 05A3 05A5 05A6 05A7
Contextual Info: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: 05A1L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

05A7L

Abstract: SOD-123FL
Contextual Info: 05A1L THRU 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.016 gram SOD-123FL

05A1

Abstract: 05A2 05A3 05A4 05A5 05A6 05A7
Contextual Info: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: 05A1L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

Contextual Info: 05A1L THRU 05A7L SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.016 gram SOD-123FL

05A1

Abstract: 05A2 05A3 05A4 05A5 05A6 05A7
Contextual Info: 05A1 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 05A7 SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TSP50C04

Abstract: BD 4914 MX 0541 TSP5220 TSP50C12 BA 59 04AF P DAC 0804 interfacing DAC with 0830 microprocessor LCD 16PIN mozart
Contextual Info: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

MSTAR 901

Abstract: MSTAR 828 dic a700 stk 795 821 GE 8352 MSTAR 309 108 046f 864F 5252 F 0921 XD 5252 F
Contextual Info: fig-FORTH FOR PACE ASSEMBLY SOURCE LISTIN G RELEASE 1 WITH COMPILER SECURITY AND VARIABLE LENGTH NAMES MAY 1979 This public domain publication is provided through the courtesy of the Forth Interest Group, P .O . Box 1105, San Carlos, CA 94070. Further distribution must include this notice.

thermistor R53

Abstract: thermistor R55 ADC 8040 CD4511 tunable lasers diode applications 7seg led ADN2830 ADN8830 fujitsu optical module tunable laser rs-232
Contextual Info: AN-655 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Tunable Laser Reference Design for Designers with the ADuC832/ADN8830/ADN2830 by Nobuhiro Matsuzoe FEATURES

24co1

Abstract: LM7805T LM7805-TO92 LM7805-TO application notes CS5460 15 1e75 cs 13 02902 MT2113-ND TRANS-2102 CSE187-L
Contextual Info: AN220 Watt-Hour Meter using PIC16C923 and CS5460 FIGURE 1: Authors: WATT-HOUR METER Brett Duane, Stephen Humberd Microchip Technology Inc. OVERVIEW This application note shows how to use a PIC16C923 microcontroller to control operation of the CS5460 power measurement integrated circuit from Cirrus

THEFT

Abstract: "Mitsubishi SINGLE CHIP MICROCOMPUTER" c816 M30217MA-XXXXFP M30218 M30218FCFP M30218MC-XXXXFP DSA003632
Contextual Info: Mitsubishi single-chip microcomputer M30218 Group User’s manual tentative Specifications written in this user's manual are believed to be accurate, but are not guaranteed to be entirely free of error. Specifications in this manual may be changed for functional or performance improvements. Please make sure your manual is the latest edition.

Contextual Info: QPL RF INDUCTORS - THRU HOLE ER18M TRADITIONAL Estabilished Reliability Wirewound, Molded, Qualified, MIL-PRF-39010 Pb M39010/04 Phenolic Core /05 Powdered Iron Core PART NUMBER MIL PART L µH Q NUMBER MIN ER18M150*M ER18M160JM ER18M180*M ER18M200JM ER18M220*M

DW016

Abstract: d 1830 STR W 6262 TSP50C19 2506 power supply schematic gogo board UNL 2803 DAC 0804 dac 2113 0703 idle Sharp Semiconductor
Contextual Info: MSP50x3x Mixed-Signal Processor User’s Guide SPSU006B October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

63FBGA

Abstract: KFN4G16Q2A
Contextual Info: MuxOneNAND2G KFM2G16Q2A-DEBx MuxOneNAND4G(KFN4G16Q2A-DEBx) FLASH MEMORY KFM2G16Q2A KFN4G16Q2A 2Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) Preliminary FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: GOLDSTAR TECHNOLOGY IN C / 47E ]> • 402Ô7S7 GoldStar 1 «GST 0003433 TWé-23-/5 G M 7 1 C 4 1 0 0 A /A L 4,194,304 WORDSxl BIT CMOS DYNAMIC RAM Description Features The GM71C4100A/AL is the new generation dy­ namic RAM organized 4,194,304 x 1 Bit. GM71C4100A/AL has realized higher density, higher per­

SMA DO-214AC SA4

Contextual Info: S RoH ant li p C om GLASS PASSIVATED SILICON SURFACE MOUNT DEVICES PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE RANGE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave

KFN4G16Q2M

Abstract: NAND SAMSUNG
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) MuxOneNAND8G(KFK8G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.