05FFFH Search Results

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Abstract: TC58F401
Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58F400F / FT - 90, - 1 0 TC58F401F / FT - 90, - 1 0 SILICON GATE CMOS TENTATIVE DATA 4M 524,288 W O RD S x 8 BITS/262,144 W ORDS x16 BITS CMOS FLASH M EM O RY DESCRIPTION

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

A29L008

Abstract: SA10 SA11 SA12 SA13 SA14 SA15 SA16
Contextual Info: A29L008 Series 1M X 8 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max. n Current:

am29f400bb

Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Contextual Info: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

A29L800

Abstract: A29L800V
Contextual Info: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.

amic a290021t-70

Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Contextual Info: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current

Contextual Info: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS411-00003-1v0-E ASSP ISO/IEC 18000-6 Type-C Compliant FRAM Embedded UHF Band RFID LSI TM MB97R803A/B, MB97R804A/B • OVERVIEW This specification defines the LSI specification for the passive RFID Tag LSI “MB97R803A/B, MB97R804A/

amd 29F400AB

Abstract: 29F400AT 29F400AB
Contextual Info: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors

Contextual Info: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: intJ. 2-MBIT 128K x 16, 256K x 8 LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 28F200BL-T/B, 28F002BL-T/B m Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6 V • Automatic Power Savings Feature — 0.8 mA Typical Ice Active Current in

Contextual Info: in tj 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY 28F200BX-T/B, 28F002BX-T/B • x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ x8-only Input/Output Architecture

Contextual Info: 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read — 60/80 ns Maximum Access Time

ba 5937 fp

Contextual Info: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads

Contextual Info: in tj. 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

Contextual Info: in te i. 28F200BL-T/B, 28F002BL-T/B 2-MBIT 128K x 16, 256K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.0V-3.6V ■ Expanded Temperature Range 20°C to +70°C ■ x8/x16 Input/Output Architecture

Contextual Info: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

MT28F008B3

Abstract: MT28F800B3
Contextual Info: 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply Smart 3 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks

M29W400B

Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Contextual Info: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS