05AUG Search Results

Contextual Info: F-214 Rev 05AUG14 S1SDT–10–28–GF–03.00–D–1 (1,00 mm) .03937" S1SD, S1SDT SERIES S1SD–05–28–GF–03.00–D–1 MICRO CABLE ASSEMBLY SPECIFICATIONS Mates with: T1M For complete specifications see www.samtec.com?S1SD or www.samtec.com?S1SDT

MC33689ADWB

Contextual Info: Freescale Semiconductor, Inc.Rev: 2.7 Date: 05Aug 2004 Order this document by MOTOROLA SEMICONDUCTOR MC33689 TECHNICAL DATA Product Preview LIN System basis chip System Basis Chip with LIN transceiver SILICON MONOLITHIC INTEGRATED CIRCUIT The LIN SBC is a monolithic integrated circuit combining many functions

Contextual Info: T1M–07–GF–S–V F-214 Rev 05AUG14 ISS1–10 T1M–10–GF–DV CC09R–01–GF T1M–15–GF–S–RA ISD1–07 (1,00 mm) .0394" ISS1, ISD1, CC09, T1M SERIES DISCRETE WIRE COMPONENTS & TOOLING SPECIFICATIONS TYPE Insulator Material: ISS1: Black LCP

4001D

Contextual Info: 4 TH IS DRAWING 3 IS U N P U B LIS H E D . RELEASED 2 FOR PUBLICATION ALL RIGHTS LOC RESERVED. G BY TYCO ELECTRONICS CORPORATION. COPYRIGHT D IST R E V IS IO N S 50 LTR B D E SC RIPTIO N REV PER ECR—0 5 —008131 DATE DWN APVD 05AUG 05 JR MS D D 3 WIRE

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . 3 RELEASED FOR PUBLICATION ALL COPYRIGHT 2 RIGHTS LOC RESERVED. G BY TYCO ELECTRONICS CORPORATION. D IST R E V IS IO N S 50 LTR B D E SC RIPTIO N REV PER ECR 0 5 - 0 0 8 1 3 1 DATE DWN APVD 05AUG 05 JR MS D D ,200 DIA, MAX

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. n 4 ,19 LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 47 LTR DESCRIPTION RELEASED PER PPR 97-5690-009 DATE DUN APVD 05AUG97 JDL NWD -1 7 5 . 26[6.900] PART NUMBER & DATE

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S GP 00 P LTR DESCRIPTION T REVISED PER DATE EC O S 1 3 - 0 2 0 4 - 0 5 DWN APVD JG JG 05AUG05 D D .000050 MIN THK NICKEL OVER ENTIRE CONTACT.

Contextual Info: 6 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 5 4 4 2 RELEASED EOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST AD 00 R E VIS IO N S P LTR R1 R EVISED PER DESCRIPTION DATE DWN E C O - 0 8 - 0 19 09 2 05AUG08 APVD HMR JO 0.51 [. 020 ]

Contextual Info: 6 TH IS DRAWING IS U N P U B L IS H E D . RELEAS ED ALL COPYRIGHT BY TYCO FOR PUBLIC ATIO N RIG HTS 5 4 - >- RE S ER VED . ELECTRONICS CORPORATION. REVISION S LOC D IS T AD 00 P LTR H1 D E S C R IP T IO N DATE DWN HMR JO 05AUG08 REVISED PER E C O - 0 8 - 0 19092

V7-7C19D8-640

Abstract: XII5465-V7 APR0426
Contextual Info: FO-50360-L C W C 6 I 56 REV DOCUMENT SUPERSEDES: XI 15465-V7 B 0 0 4 2 16 7 CHANGED RRS BY CHECK 05AUG08 BLR 385 25 59 D - Ht HE 87 ± . 003 40 -CORROSION R E S I S T A N T STEEL ACTUATOR RELEASE GRAMS MAX FORCE- 8 . 5 GRAMS M I N D I F F E R E N T I AL

Contextual Info: 4 COPYRIGHT 2 RELEASED FOR PUBLICATION ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S p 0.51 [. 020 ] STAND-OFFS TYP. x- A A A A A A A A A A LTR DESCRIPTION L1 REVISED PER E C 0 -0 8 -0 1 9092 DATE 05AUG08 DWN APVD HMR JO

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. REVISIONS DIST AD 00 LTR DESCRIPTION OWN DATE 05AUG04 REV PER Q G 3C-0404-04 ARVO MB RB ± 0 .0 5 „r ± .n n ? i 0.00076 [.000030] GOLD IN LOCALIZED PLATE AREA

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION - REVISIONS LOC DIST HC 00 ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 3 P LTR DESCRIPTION A ,322 8,2 D + .002 ,252 6,4 DWN APVD 05AUG1997 <YLE RDP REVISED, REDRAWN IN TYCO FORMAT.

100CL

Contextual Info: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS D IS T 00 0.51 LTR DESCRIPTION DATE DWN R1 REVISED PER E C O - 08- 019092 05AUG08 R2 REVISED PER ECO-10- 0 0 0 4 4 3

R100L

Abstract: 100CL 147-10-06
Contextual Info: 7 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . - RELEASED BY TYCO ELECTRON ICS CORPORATION. FO R 5 6 2 4 PU BLICATIO N A L L R IG H T S RESERVED. LOC D IS T AD 00 REVISIONS P LTR D E S C R IP T IO N K1 K2 DATE DWN 05AUG08 03SEP09 REVISED PER E C O -0 8 -0 1 9092

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G REVISIONS DIST 50 LTR B DESCRIPTION REV PER ECR 05-008131 DATE DWN APVD 05AUG05 JR MS aro CDLDR CDDED BRDWN ACTIVE 2001-25-P ACTIVE

Contextual Info: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. Dl ST AF 50 REVISIONS LTR B D .0 2 0 DATE DWN APVD 05AUG03 JR PD DESCRIPTION REL PER 0G3A—0 4 5 5 —0 3 D 1 SUPPLIED IN LOOSE PIECE

ats 2300

Abstract: CS22J 254-F 100CL 2032F 534267-5 534267-7
Contextual Info: 4 TH IS D R AW IN G IS 3 U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY TYCO ELECTRONICS -, P U B LIC A T IO N R IG H TS 2 - LOC AD RESERVED. CORPORATION. D IS T REVISIONS 00 D E S C R IP T IO N REVISED B PER 1 9092 ECO- HMR JO 05AUG08 TYP

Contextual Info: F-214 Rev 05AUG14 S1SST–20–28–GF–03.00–D S1SS–20–28–GF–03.00–D (1,00 mm) .03937" S1SS, S1SST SERIES MICRO CABLE ASSEMBLY SPECIFICATIONS Mates with: T1M For complete specifications see www.samtec.com?S1SS or www.samtec.com?S1SST Insulator Material:

440360-1

Abstract: C-440360
Contextual Info: 35 48.00 01.40 @0.80X601 6.55 0.60 ALL CONTACTS & LATCH PEGS. fill m +0.25 T +0-25 7.95 -0.125 55.95-0.125 NOTE : 1. MATERIAL HOUSING : HIGH TEMPARETURE THERMOPLASTIC, UL 94V-0, BLACK COLOR CONTACT : COPPER ALLOY LATCH : STEEL 2. FINISH CONTACT : 0.25um MIN. GOLD PLATED ON CONTACT,

Contextual Info: BAT54W-V Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: BAT42WS-V, BAT43WS-V Vishay Semiconductors Small Signal Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges

Contextual Info: SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors Small Signal Schottky Diodes Features • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications.

BAS70-05-V

Contextual Info: BAS70-00-V to BAS70-06-V Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges