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    057N03MS Search Results

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    057N03MS Price and Stock

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    Infineon Technologies AG BSC057N03MSGATMA1

    Transistor: N-MOSFET; unipolar; 30V; 71A; 45W; PG-TDSON-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME BSC057N03MSGATMA1 5,000
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    Rochester Electronics BSC057N03MSGATMA1 46,557 1
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    Infineon Technologies AG BSC057N03MSG

    Trans MOSFET N-CH 30V 15A 8-Pin TDSON EP T/R
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    Bristol Electronics BSC057N03MSG 4,859 1
    • 1 $0.94
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    Infineon Technologies AG BSC057N03MS G

    Trans MOSFET N-CH 30V 15A 8-Pin TDSON EP T/R
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    Bristol Electronics BSC057N03MS G 22
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    International Rectifier BSC057N03MSGATMA1

    MOSFET N-Channel 30V 15A (Ta), 71A (Tc) 8-SON T/R
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    Rochester Electronics BSC057N03MSGATMA1 25,000 1
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    057N03MS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Infineon

    Abstract: 057N03MS
    Contextual Info: 057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5.7 mΩ V GS=4.5 V 7.2 ID


    Original
    bsc057n03ms057n03msinfineon PDF

    Contextual Info: 057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS • Optimized for 5V driver application Notebook, VGA, POL RDS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V VGS=10 V 5.7 mW VGS=4.5 V 7.2 ID • N-channel


    Original
    bsc057n03msiec61249-2-21057n03ms PDF

    057N03MS

    Contextual Info: 057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5.7 mΩ V GS=4.5 V 7.2 ID


    Original
    bsc057n03ms057n03ms PDF

    BSC057N03MS

    Abstract: JESD22 BSC057N03MS G
    Contextual Info: 057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5.7 mΩ V GS=4.5 V 7.2 ID


    Original
    bsc057n03ms057n03msjesd22bsc057n03ms g PDF

    057N03MS

    Abstract: BSC057N03MS G BSC057N03MS IEC61249-2-21 JESD22
    Contextual Info: 057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5.7 mΩ V GS=4.5 V 7.2 ID


    Original
    bsc057n03msiec61249-2-21057n03msbsc057n03ms g+1jesd22 PDF