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SICK AG 1053494 VFS60E-TGNZ0-S01 MOTORFEEDBACK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1053494	Box			1	1 $947.52 10 $947.52 100 $947.52 1000 $947.52 10000 $947.52	Buy Now
Intel Corporation CM8071506053494 CPU - Central Processing Units Intel Core 5 processor 213PEF (24M Cache, up to 5.20 GHz) FC-LGA16A, Tray
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Mouser Electronics	CM8071506053494					1 $314.27 10 $270.91 100 $260.09 1000 $260.09 10000 $260.09	Get Quote
WIKA Instrument LP 50534947 PRESSURE GAUGE;ANALOG;-30 INHG/+160 PSI/BAR;4";1/2" NPT;BACK MOUNT;304SS CASE
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RS	50534947	Bulk			1	1 $110.32 10 $104.80 100 $102.60 1000 $102.60 10000 $102.60	Get Quote
BM Group spa BM053494 Tip: ring tube; M12; Ø: 12.5mm; 150mm2; crimped; for cable; tinned
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TME	BM053494		23		1	1 $5.09 10 $4.52 100 $4.28 1000 $4.28 10000 $4.28	Buy Now
Fischer Elektronik GmbH & Co KG 10053494 Connector: pin strips; pin header; male; PIN: 24; THT; 3A; 250V; SL 2
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TME	10053494				1	1 $1.42 10 $1.42 100 $1.13 1000 $0.99 10000 $0.99	Get Quote

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053494 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXAN0062 Abstract: 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet Contextual Info: IXAN0062 IXYS Power MOSFET Products Abdus Sattar, IXYS Corporation This paper presents IXYS Corporation’s power MOSFET products and their typical application information. Power MOSFETs are widely used in power switching applications due to their features of easy control, fast	Original	IXAN0062 IXAN0062 1000V P-channel MOSFET DMOSFET "Power MOSFETs" power mosfets mosfet 1000v Silicon MOSFET 1000V mosfets P-Channel Depletion Mosfets depletion mode power mosfet	PDF
053494 Contextual Info: max. 25.3 IW Bemerkung: Sonstige Angaben: Palzahl. Bestückung. Bauart. Anschtussart. Anschlusslaenge, Voreilung. Anfarderungsstufe. Gehaeusematerial und Aufdruck siehe Fertigungsunterlagen. ra - 1 TI II io CO LU 1 11 s r CN CN o m - II lu 1 11 II .u 1 II	OCR Scan	01E1999 STVH15 053494	PDF
Contextual Info: max. 25.3 Bemerkung: Sonstige Angaben: Potzahl. Bestückung. Bauart. Anschlussart. Anschlusslaenqe. Voreilung. Anforderungsstufe. Gehaeusematerial und Aufdruck siehe Fertigungsunterlagen. S I ’1 11 LO 00 II Cn s r CNI _U '1 11 II Ë3- .U 1 11 II LU 1	OCR Scan	Q00008906	PDF
IXAN0065 Abstract: IXTQ130N10T mosfet ixys Contextual Info: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance	Original	IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys	PDF
IXAN0063 Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS Contextual Info: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.	Original	IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS	PDF