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Texas Instruments SN0508073PWR
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Bristol Electronics	SN0508073PWR		46			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Laird, A DuPont Business 9810508073 EMI Gaskets, Sheets, Absorbers & Shielding
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Sager	9810508073					1 - 10 - 100 - 1000 - 10000 -	Buy Now

0508073 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT56M50B2 Abstract: APT56M50L MIC4452 Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452	PDF
APT56M50L Abstract: APT56M50B2 MIC4452 0508073 Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT56M50B2 APT56M50L O-264 O-247 APT56M50L APT56M50B2 MIC4452 0508073	PDF
Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra	Original	APT56M50B2 APT56M50L O-264 O-247	PDF
APT56M50B2 Abstract: APT56M50L MIC4452 Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452	PDF
APT56M50B2 Abstract: APT56M50L MIC4452 a1175 Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	APT56M50B2 APT56M50L O-264 O-247 APT56M50B2 APT56M50L MIC4452 a1175	PDF
Contextual Info: APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra	Original	APT56M50B2 APT56M50L O-264 APT56M50B2 O-247	PDF