05058 Search Results

BAT54

Abstract: SLMA002 TPS40070 TPS40070PWP TPS40070PWPR TPS40071 TPS40071PWP DXM1306-1R6
Contextual Info: TPS40070 TPS40071 www.ti.com . SLUS582J – DECEMBER 2003 – REVISED APRIL 2009 HIGH-EFFICIENCY MIDRANGE INPUT SYNCHRONOUS

VDG-03172

Contextual Info: TPS40074 www.ti.com SLUS617B – APRIL 2005 – REVISED OCTOBER 2006 MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD FEATURES • • • • • • • • • • • • Operation Over 4.5-V to 28-V Input Range Fixed-Frequency Voltage-Mode Controller

Contextual Info: APT6045CVR 600V 11.8A 0.450Ω POWER MOS V TO-254 TO-254 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

605A

Contextual Info: APT60M75PVR 600V 60.5A 0.075Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Contextual Info: APT40M35PVR 400V 89A 0.035Ω POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Contextual Info: APT1001R1HVR ADVANCED POW ER Te c h n o l o g y 1000V 9A 1.1000 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10088HVR ADVANCED POW ER Te c h n o l o g y 1000V 11A 0.8800 POWER MOSV Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT8058HVR ADVANCED POW ER Te c h n o l o g y P O W E R 800V 13.5A 0.5800 M O S V Power MOSV® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: TPS40070 TPS40071 www.ti.com SLUS582G – DECEMBER 2003 – REVISED MARCH 2006 HIGH-EFFICIENCY MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD FEATURES • • • • • • • • • • DESCRIPTION Operation Over 4.5-V to 28-V Input Range

drain

Abstract: APT6027HVR
Contextual Info: APT6027HVR 600V POWER MOS V 20A 0.270Ω TO-258 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: TPS40074 www.ti.com SLUS617A – APRIL 2005 – REVISED FEBRUARY 2006 MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD FEATURES • • • • • • • • • • • • Operation Over 4.5-V to 28-V Input Range Fixed-Frequency Voltage-Mode Controller

IHLP5050FDRZ

Abstract: ihlp5050fdrz2r2m BAT54 PH2625L PH6325L TPS40074 TPS40074RHLR TPS40074RHLT AA1206 2.4 dcm 10 watts power amplifier schematic diagrams
Contextual Info: TPS40074 www.ti.com SLUS617B – APRIL 2005 – REVISED OCTOBER 2006 MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD FEATURES • • • • • • • • • • • • Operation Over 4.5-V to 28-V Input Range Fixed-Frequency Voltage-Mode Controller

APL602B2

Contextual Info: APL602B2 G APL602L(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 600V 49A 0.125Ω B2 LINEAR MOSFET T-MAX TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at

Contextual Info: APL602J 600V 43A 0.125Ω LINEAR MOSFET S S Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . 27 2 T- D G SO "UL Recognized" ISOTOP • Higher FBSOA

TO-204AE Package

Contextual Info: APT1001R1AVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

TO-258

Abstract: d 434
Contextual Info: APT1001R1HVR OPERATION HERE LIMITED BY RDS ON 10µS 11,000 100µS 5,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 40 5 1mS 1 10mS .5 TC =+25°C TJ =+150°C SINGLE PULSE 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

1000 watt buck converter scheme

Abstract: BAT54 PH2625L PH6325L TPS40074 TPS40074RHLR TPS40074RHLT
Contextual Info: TPS40074 www.ti.com SLUS617 – APRIL 2005 MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD FEATURES • • • • • • • • • • • • Operation Over 4.5-V to 28-V Input Range Fixed-Frequency Voltage-Mode Controller Integrated Unity Gain Amplifier for Remote

TPS40071

Abstract: SLMA002 TPS40070 TPS40070PWP TPS40070PWPR TPS40071PWP
Contextual Info: TPS40070 TPS40071 www.ti.com . SLUS582J – DECEMBER 2003 – REVISED APRIL 2009 HIGH-EFFICIENCY MIDRANGE INPUT SYNCHRONOUS

Contextual Info: TPS40075 www.ti.com SLUS676A – MAY 2006 – REVISED SEPTEMBER 2007 MIDRANGE INPUT SYNCHRONOUS BUCK CONTROLLER WITH VOLTAGE FEED-FORWARD FEATURES 1 • Operation Over 4.5-V to 28-V Input Range • Fixed-Frequency Voltage-Mode Controller • Integrated Unity Gain Amplifier for Remote

imx 105

Abstract: FH FUSE SMD SMD Fuse F2A
Contextual Info: Board Mountable DC-DC Converters 4 Watt DC-DC Converters IMX 4 Series IMX 4 Series Input voltage ranges up to 121 V DC 1 or 2 outputs up to 48 V DC Up to 2000 V DC I/O electric strength test • Extremely wide input voltage ranges • Electrical isolation, single and dual outputs

m 2004 avo

Contextual Info: IMX4 DC-DC Series Data Sheet 4-Watt DC-DC Converters Input voltage ranges up to 121 VDC 1 or 2 outputs up to 48 VDC Up to 2000 VDC I/O electric strength test Features • Extremely wide input voltage ranges • Rated to Basic isolation 20 0.8" • Electrical isolation, single and dual outputs

APT6035AVR

Contextual Info: APT6035AVR 600V 16A 0.350Ω POWER MOS V TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT12080B2VFR APT12080LVFR 1200V 16A 0.800Ω POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APL502L

Abstract: 7485 305F APL502B2
Contextual Info: APL502B2 APL502L 500V 58A 0.090Ω B2 LINEAR MOSFET T-MAX TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions >100 msec . L D • Higher FBSOA