04MAY1 Search Results

0MIH-SH-112LM

Abstract: OMIH-SH-105LM 0MIH-SH-112DM SH-112Dm 0MIH-SH-118LM 124lm
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . REUEASED FO R AUU C O P Y R IG H T By 2 3 P U B U IC A T IO N R IG H TS REVISIO NS RESERVED. H - LTR C1 © D E S C R IP T IO N RE VISED PER DATE E C O - 1 1- 00 51 40 DWN A PVD RK HMR 04MAY11 PART A PART B

PFRR

Contextual Info: PFRR www.vishay.com ESCC Vishay 4001/023 Qualified R Failure Rate High Precision (10 ppm/°C, 0.05 %) Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.25 % under Pr • Temperature coefficient to: 10 ppm/°C • Very low noise (< - 35 dB) and voltage coefficient

vskt

Abstract: VSKT152
Contextual Info: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips

LH1540

Abstract: LH1540AAB LH1540AABTR LH1540AT dip6 IL-250 LH1540 SSR
Contextual Info: LH1540AAB, LH1540AABTR, LH1540AT Vishay Semiconductors 1 Form A Solid State Relay FEATURES S • Current limit protection S' • Isolation test voltage 5300 VRMS S 6 DC S' 5 4 • Typical RON 20 Ω, max. 25 Ω • Load voltage 350 V • Load current 120 mA

AR3PM

Contextual Info: New Product AR3PK, AR3PM Vishay General Semiconductor Fast Switching Avalanche Surface Mount Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Glass passivated chip junction • Fast reverse recovery time

E78996 datasheet bridge

Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: NTCC100E4 Vishay BCcomponents NTC Thermistors, Naked Chips FEATURES QUICK REFERENCE DATA PARAMETER Resistance value at 25 °C R25 Tolerance on R25-value B25/85-value Tolerance on B25/85-value Operating temperature range: At zero dissipation (continuously)

Amphenol SMA

Contextual Info: REVISIONS 135101-07-XX.XX NOTES: DRAWING NO. 1. 2. PERFORM CONTINUITY & HI-POT TESTING. REV THIRD ANGLE PROJ. PACKAGE INDIVIDUALLY IN HEAT SEALED POLY BAG. DESCRIPTION DATE ECO APPR A RELEASE TO MFG. 04-May-10 - CL B NOTE ADDED 05-Jul-10 2070 KR TAG IN BAG WITH "AMPHENOL CONNEX,135101-07-XX.XX AND DATE CODE".

Contextual Info: HLW, NHLW www.vishay.com Vishay Dale Wirewound Resistors, Industrial Power, Tubular FEATURES • High temperature silicon coating • Complete welded construction • Excellent for intermittent power and pulsing applications • Available in non-inductive styles model

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

AU2PD

Contextual Info: New Product AU2PD, AU2PG, AU2PJ Vishay General Semiconductor Ultrafast Avalanche Surface Mount Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Glass passivated chip junction • Fast reverse recovery time

Contextual Info: BAW56-V-G Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Technical Note TN-0004

Contextual Info: VISHAY www.vishay.com Tantalum Capacitors Technical Note TN-0004 Guidelines for Replacing Tantalum Capacitors Using a Soldering Iron Printed circuit boards to which no manual repairs have been made are proven to pass testing processes with more success and

SIHA18N60E-E3

Contextual Info: SiHA18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18

pc-gf-20

Contextual Info: R E L E A S E D F Ô R P U B LIC A T IO N - THIS D RAW ING IS UNPUBLISHED. VERTRAU LICH E U N V ERO EFFEN TLICH TE ZEICH N UN G FREI FUER V ERO EFFEN TLICH U N G i REVISIONS M ATED W ITH: PASSEN D ZU: A L L RIGHTS RESERVED. A LLE RECHTE VO RBEHALTEN

AR3PM

Contextual Info: New Product AR3PK, AR3PM Vishay General Semiconductor Fast Switching Avalanche Surface Mount Rectifiers FEATURES eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Glass passivated chip junction • Fast reverse recovery time

Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

Contextual Info: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

GA100TS60SFPbF

Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

Contextual Info: VSKDU162/12PbF Vishay High Power Products HEXFRED Ultrafast Diodes, 100 A New INT-A-PAK Power Modules FEATURES • Electrically isolated: DBC base plate • Standard JEDEC package • Simplified mechanical designs, rapid assembly • High surge capability

diode BY 127

Contextual Info: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability

width50s

Abstract: GA100TS120UPBF
Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

b12 marking

Abstract: 50K Linear Taper Potentiometer
Contextual Info: PRV6 www.vishay.com Vishay Sfernice Fully Sealed Potentiometer Cermet or Conductive Plastic FEATURES • • • • • • • • • PRV6S high power rating 1.5 W at 70 °C cermet PRV6A 0.75 W at 70 °C (conductive plastic) Tests according to CECC 41000 or IEC 60393-1