04JUL2003 Search Results

Contextual Info: M69AR048B 32 Mbit 2M x16 1.8V Asynchronous 1T/1C SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ ACCESS TIMES: 70ns, 80ns, 85ns ■ LOW STANDBY CURRENT: 100µA ■ DEEP POWER DOWN CURRENT: 10µA ■ BYTE CONTROL: UB/LB ■ PROGRAMMABLE PARTIAL ARRAY

M50FLW040A

Abstract: M50FLW040B PLCC32 TSOP32
Contextual Info: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

M50FLW040A

Abstract: M50FLW040B PLCC32 TSOP32 A19-21
Contextual Info: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

SAMSUNG NAND FLASH

Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Contextual Info: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for

Contextual Info: DD NDT SCALE D IM E N S IO N S IN METRIC mm THIRD ANGLE PROJECTION NDTESi 1 S E C T IO N 1G, 2 ± 0, 25 C = N - l x 2 J 54+8, 6 h o - FDR -c=H B TABLE I 0, 4 MIN. M A T I N G CDNTACT AREA =< N - l ) x 2 , 5 4 + 5 , 1 SEE TA K E NUMBER DF P O S I T I O N S

ICCP16

Contextual Info: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY

PPLC32

Contextual Info: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory PRELIMINARY DATA FEATURES SUMMARY • FLASH MEMORY ■ – Compatible with either LPC interface or FWH interface (Intel Spec rev1.1) used in PC BIOS

M50FLW040A

Abstract: M50FLW040B PLCC32 TSOP32
Contextual Info: M50FLW040A M50FLW040B 4-Mbit 5 x 64 Kbyte blocks + 3 × 16 × 4 Kbyte sectors 3-V supply Firmware Hub / low-pin count Flash memory Feature summary • ■ ■ ■ ■ Flash memory – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used

H9302

Contextual Info: DO ± 0, 1 5 NOT SCALE DIMENSIONS THIRD ANGLE METRIC IN m m PR O JECTIO N F NOTES A C O R I N G O U T S <4x □PHONAL C O N T A C T ARE A TO BE L U B R I C A T E D WIT H L U B R I C A T I O N C E L E C T R O L U B E 2X> MIN. 1 1 0 m g / 1 0 0 0 C O N T A C T S

Contextual Info: M50FLW040A M50FLW040B 4 Mbit 5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • FLASH MEMORY Figure 1. Packages – ■ Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)

M69AR048B

Abstract: TFBGA48
Contextual Info: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB

M69AR048B

Abstract: TFBGA48
Contextual Info: M69AR048B 32 Mbit 2Mb x16 1.8V Asynchronous PSRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V ACCESS TIMES: 70ns, 80ns, 85ns LOW STANDBY CURRENT: 100µA DEEP POWER-DOWN CURRENT: 10µA BYTE CONTROL: UB/LB PROGRAMMABLE PARTIAL ARRAY