04JAN01 Search Results

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHT5 RESERVED. DIST FT REVISIONS 64 LTR K RECEPTACLE 2 A . TUBE TWO ACCEPTS A .0 0 8 -.0 1 4 TH IC K I.C. DESCRIPTION REV PER O G 3C -00 6 6-01 DATE

e417

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Contextual Info: 7 DRAWI NG THIS MADE IN DRAWI NG THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 5 6 3 4 PROJECTION RELEASED BY AMP F OR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI S T LOC 19 AD RESERVED. REV I 5 I0N5 25 LTR ZONE G H J D •A 1 34 [ 3 . 7 0 0 ] 2 . 54

Contextual Info: 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. FT DIST REVISIONS 64 LTR DESCRIPTION REV PER Q G 3 C -0 1 6 2 - 9 9 1 . RECEPTACLE 2. TUBE A TWO ACCEPTS A .0 0 8 -.0 1 4 T H IC K

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Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC R E VIS IO N S D IS T FT ALL RIGHTS RESERVED. 64 G G 1 RECEPTACLE 2 TUBE 3\ TWO A .0 0 8 - ,0 1 T H IC K I.C. DWN APVD REV PER Q G 3 C - 0 1 6 2 - 9 9

535071-4

Abstract: b0367
Contextual Info: 7 DRAWING TH IS NADE IN DRAWING THIRD 15 ANGLE O N P Ü B L I5HED COPYRIGHT 19 6 5 RELEASED BY AMP FOR PUBLICATIO N INCORPORATED. ALL 2 3 4 T> PROJECTION INTERNATIONAL RIGHTS DI ST L OC 19 AD RESERVED. D A1 INDICATOR 5 3 . 3 4 [ 2. 100] REV I 5 I0N5 25

Contextual Info: 04-JAN-01 > o CO x <3> 11:08:17 o amp40973 o I X /home/amp40973/edmmod X M M X X X X X X o x cn m m jj . X X X 1+ • ~ i+ ^ i+ O O O 1+ X o o o o o oo X X X » o M i_ i X m X -a? •»8 12 \p jl tc I 32 7r H I 32 HUSH HEMÜ HEMÜ HEMÜ HEMÜ USUIS] HUSH

SST4391

Abstract: 2N4393 2N4393 VISHAY 4392 SST4393 Vishay 2N4391 2N4392 PN4391 PN4392 PN4393
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 –4 to –10 30 5 4 2N/PN/SST4392

PW 2N

Abstract: marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY P a rt N u m b e r V û S o ff ( V ) r D S (o n) M a x ( Q ) ItH o ff) T Y P ( P A ) 2N/PN/SST4391 - 4 to -1 0 30 5 4

4392

Abstract: siliconix AN1 SST4393 Vishay 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 –4 to –10 30 5 4 2N/PN/SST4392

2N4393

Abstract: 2N4391 2N4392 PN4391 PN4392 PN4393 SST4391 PW 2N 2N4393 VISHAY
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 –4 to –10 30 5 4 2N/PN/SST4392

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC FT ALL RIGHT5 RE5ERVED- DIST REVISIONS 64 p LTR G CIRCUIT CAVITY NO. 1 . RECEPTACLE 2. TUBE A TWO A .0 0 8 -.0 1 4 TH IC K I.C. DATE DWN RB HW 17NOVOO

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 6 5 4 3 2 ,- GP ALL RIGHTS RESERVED. 00 R E V IS IO N S p LTR H DESCRIPTION OBSOLETED: 8 /0 PER EC 0 S 1 D - 0 0 8 7 - 0 0 DATE DWN APVD 21 JAN2002 DD DS

Contextual Info: 7 DRAWING THIS NADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 6 5 RELEASED 19 BY AMP FOR PUBLICATION INCORPORATED. ALL 2 3 4 TO PROJECTION INTERNATIONAL RIGHTS DI ST LOC 19 AD RESERVED. REV I 5 I0N5 25 ZONE LTR D MATERIAL: GLASS-FILLED C ONT A CT

71516

Abstract: Si3460DV
Contextual Info: SPICE Device Model Si3460DV Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

amp 535089-5

Contextual Info: 7 DRAWING THIS NADE IN DRAWING THIRD 15 ANGLE 6 5 2 3 4 PROJECTION UNPUBLI5HED COPYRIGHT 19 RELEASED BY AMP FOR INCORPORATED. DI ST LOC 19 PUBLICATION 25 AD ALL INTERNATIONAL RIGHTS RESERVED. REV I 5 I 0 N 5 DE5CR[PTION LTR ZONE F REVISED PER G REV EC PER

6y26

Abstract: D008
Contextual Info: 6 7 DRAWING NADE THIS IN DRAWING THIRD 15 ANGLE U NP U B L I 5H E D COPYRI GHT 5 RELEASED 19 AMP BY FOR P U B L I C A T I O N INCORPORATED. A LL 3 4 77 PROJECTI ON I N T E R N A T I ON A L DI ST LOC 19 AD RI GHTS RESERVED. 1 14. 3 [ 4. 5 0 0 ] 3 . 9 6 [ . 156]

XF 020

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Si4936ADY

Contextual Info: SPICE Device Model Si4936ADY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: 8 T H IS D R A W IN G IS 6 7 DRAWING MADE IN THIRD ANGLE PROJECTION U N P U B L IS H E D . R E L E A S E D FOR P U B L IC A T IO N 3 4 5 2 PUB DATE LOC AD 1*-A C O P Y R I G H T I 9YR B Y A M P I N C O R P O R A T E D , H A R R I S B U R G ,P A . A L L I N T E R N A T I O N A L R I G H T S