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    04CNE8N

    Abstract: IEC61249-2-21 JESD22 PG-TO220-3 04cne8
    Contextual Info: 04CNE8N G 04CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 3.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB04CNE8N IPP04CNE8N IEC61249-2-21 PG-TO263-3 PG-TO220-3 04CNE8N 04CNE8N IEC61249-2-21 JESD22 PG-TO220-3 04cne8 PDF

    04CNE8N

    Abstract: JESD22 PG-TO220-3 IPB04CNE8N
    Contextual Info: 04CNE8N G 04CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 3.9 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		IPB04CNE8N IPP04CNE8N PG-TO263-3 PG-TO220-3 04CNE8N 04CNE8N JESD22 PG-TO220-3 PDF