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    047N08NS Search Results

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    047N08NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC047N08NS3GATMA1

    MOSFET N-CH 80V 18A/100A TDSON
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    DigiKey () BSC047N08NS3GATMA1 Cut Tape 9,998 1
    • 1 $3.08
    • 10 $2.12
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    BSC047N08NS3GATMA1 Digi-Reel 9,998 1
    • 1 $3.08
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    BSC047N08NS3GATMA1 Reel 5,000 5,000
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    Avnet Americas BSC047N08NS3GATMA1 Reel 26 Weeks 5,000
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    Mouser Electronics BSC047N08NS3GATMA1 6,505
    • 1 $2.92
    • 10 $2.04
    • 100 $1.49
    • 1000 $1.22
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    Newark BSC047N08NS3GATMA1 Bulk 1
    • 1 $3.01
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    Rochester Electronics BSC047N08NS3GATMA1 2,711 1
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    Chip One Stop BSC047N08NS3GATMA1 Cut Tape 16,090 0 Weeks, 1 Days 1
    • 1 $2.73
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    EBV Elektronik BSC047N08NS3GATMA1 27 Weeks 5,000
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    Win Source Electronics BSC047N08NS3GATMA1 45,910
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    Infineon Technologies AG BSC047N08NS3 G

    MOSFETs N-Ch 80V 100A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC047N08NS3 G 3,356
    • 1 $3.27
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    Bristol Electronics BSC047N08NS3 G 7,835
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    Infineon Technologies AG BSC047N08NS3G

    TRANSISTOR, MOSFET, N-CHANNEL, 80V, 18A, 4.7 MOHM, 3-POWER, TDSON8 EP
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    RS BSC047N08NS3G Bulk 10 3 Weeks 1
    • 1 $0.90
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    Bristol Electronics BSC047N08NS3G 66
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    Win Source Electronics BSC047N08NS3G 50,000
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    • 1000 $0.54
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    047N08NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    047N08NS

    Abstract: BSC047N08NS3 G BSC047N08NS3 IEC61249-2-21 JESD22
    Contextual Info: 047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS on ,max 4.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC047N08NS3 IEC61249-2-21 047N08NS 047N08NS BSC047N08NS3 G IEC61249-2-21 JESD22 PDF

    047N08NS

    Abstract: 047N08 BSC047N08NS3 G
    Contextual Info: 047N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 4.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC047N08NS3 047N08NS 047N08NS 047N08 BSC047N08NS3 G PDF

    Contextual Info: 047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS on ,max 4.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC047N08NS3 IEC61249-2-21 047N08NS PDF

    BSC047N08NS3

    Abstract: JESD22
    Contextual Info: 047N08NS3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 4.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC047N08NS3 047N08NS JESD22 PDF

    047N08

    Abstract: W6010 DS 13 C
    Contextual Info: 047N08NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters VDS 80 V RDS on ,max 4.7 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC047N08NS3 IEC61249-2-21 047N08NS 047N08 W6010 DS 13 C PDF