047000 Search Results

Contextual Info: Data sheet ELPA 047 LIGHT Staircase time switches Article number: 0470002 ELPA 047 Article number: 0470002 Description • ■ ■ ■ Flush-mounted staircase time switch, electronic Suitable for upgrades and new installation Switch or push button connectable,

Contextual Info: SN74ABT541BĆEP OCTAL BUFFER/DRIVER WITH 3ĆSTATE OUTPUTS SCBS797 − JANUARY 2004 D Controlled Baseline D D D D D D Typical VOLP Output Ground Bounce <1 V − One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Contextual Info: Mài BD INNOVATIVI C O N N fO IO N S Welcome to the W AGO online catalogue CATALOG PO W ER S E A R C H Colour: D Pos. Item no. y Product description 232-145 FEMALE PLUG WITH STRAIGHT SO LDER PIN 15 POLE PIN SPACING 5 MM / 0.197 IN SO LDER PIN 0.6x1 MM WITH CODIG FINGERS MATING DIRECTION PERPENDICULAR TO

Contextual Info: Data sheet from 02.06.2010 Item no.: 232-136 Product description: FEMALE CONNECTOR WITH STAIGTH SOLDER PIN 6 POLE PIN SPACING 5 MM / 0.197 IN SOLDER PIN 0.6x1 MM WITH CODING FINGERS MATING DIRECTION PERPENDICULAR TO PCB WITH INTEGRATED FIXING FLANGES Packing unit 50 pieces

Contextual Info: Data sheet from 16.05.2012 Item no.: 232-262 Product description: FEMALE CONNECTOR WITH RIGHT ANGLED SOLDER PIN 2 POLE PIN SPACING 5.08 MM / 0.2 IN SOLDER PIN 0.6x1 MM WITH CODING FINGERS MATING DIRECTION PARALLEL TO PCB CLOSED END Produkt kann von Bild abweichen / product may differ

Contextual Info: Data sheet from 19.07.2011 Item no.: 232-265 Product description: FEMALE CONNECTOR WITH RIGHT ANGLED SOLDER PIN 5 POLE PIN SPACING 5.08 MM / 0.2 IN SOLDER PIN 0.6x1 MM WITH CODING FINGERS MATING DIRECTION PARALLEL TO PCB WITH INTEGRATED FIXING FLANGES Produkt kann von Bild abweichen / product may differ

Contextual Info: ESM T F25L16PA 2S Flash ̈ 16 Mbit Serial Flash Memory with Dual FEATURES „ Single supply voltage 2.7~3.6V „ Standard and Dual „ Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz

SA452

Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this

JS28F512M29

Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
Contextual Info: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers

Contextual Info: ESM T F25L32QA 2S Flash ̈ 32 Mbit Serial Flash Memory with Dual and Quad FEATURES „ „ Single supply voltage 2.65~3.6V Standard, Dual and Quad SPI „ Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz / 86MHz / 104MHz - Fast Read Dual/Quad max frequency: 50MHz / 86MHz /

M29W128GL

Abstract: M29W128GH70 M29W128G M29W128GL7
Contextual Info: M29W128GH M29W128GL 128-Mbit 16 Mbit x8 or 8 Mbit x16, page, uniform block 3 V supply flash memory Features BGA „ Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional)

SN74ABT541B-EP

Contextual Info: SN74ABT541BĆEP OCTAL BUFFER/DRIVER WITH 3ĆSTATE OUTPUTS SCBS797 − JANUARY 2004 D Controlled Baseline D D D D D D Typical VOLP Output Ground Bounce <1 V − One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

EN39SL160

Abstract: cFeon EN cFeon serial Flash chip 07c0
Contextual Info: EN39SL160H/L EN39SL160H/L 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • - • Single power supply operation - Full voltage range:1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications.

Spansion S29GL512N11

Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages

FAA064

Abstract: SPANSION S29GL128 S29GL128 S29GL-N S29GL-P GL128N GL256N S29GL128N S29GL256N
Contextual Info: S29GL-N MirrorBit Flash Family with Alternative BGA Layout S29GL256N, S29GL128N 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology S29GL-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

120R

Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: ESM T F25L16QA 2S Flash ̈ 16 Mbit Serial Flash Memory with Dual and Quad FEATURES „ „ Single supply voltage 2.7~3.6V Standard, Dual and Quad SPI „ Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual/Quad max frequency: 50MHz / 86MHz /

l256mh113

Abstract: L256ML123R
Contextual Info: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,

L256MH113R

Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

a22t

Abstract: S19G S29GL-N
Contextual Info: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications

S29GL-N

Abstract: 1E300
Contextual Info: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this

f25l16

Abstract: pg2s
Contextual Info: ESMT F25L16PA 2S Flash „ 16 Mbit Serial Flash Memory with Dual FEATURES y Single supply voltage 2.7~3.6V y Standard and Dual y Speed - Read max frequency: 50MHz - Fast Read max frequency: 50MHz / 86MHz / 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz

Contextual Info: EN39SL801 EN39SL801 8 Megabit 512K x 16-bit Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • - • Single power supply operation - Full voltage range: 1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications.