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041REF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
XA2 MMIC Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No SIRENZA Sirenza C4 marking	PDF
Sirenza amplifier SOT-89 Marking Abstract: .XA2 Contextual Info: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXH-189 SXH-189 SXA-289 016REF 118REF 041REF EDS-101247 Sirenza amplifier SOT-89 Marking .XA2	PDF
1485C Abstract: SE 194 Sirenza amplifier SOT-89 Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 1485C SE 194 Sirenza amplifier SOT-89	PDF
Xa2 TRANSISTOR Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR XA2 MMIC Sirenza amplifier SOT-89 marking XA2 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING	PDF
Xa2 TRANSISTOR Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ Contextual Info: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 016REF 118REF 041REF EDS-100622 Xa2 TRANSISTOR transistor 289 MMIC "SOT 89" marking rf power amplifier 850 MHZ	PDF
SXT-289 Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXT-289 Pate02 016REF 118REF 041REF EDS-101157 transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC	PDF
marking 25 mmic sot-89 Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXT-289 SXT-289 016REF 118REF 041REF EDS-101157 marking 25 mmic sot-89 RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM	PDF
Xa3 TRANSISTOR Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking Contextual Info: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-389 SXA-389 MPO-100136 016REF 118REF 041REF 015TYP EDS-102231 Xa3 TRANSISTOR 041R 267M3502104 MCH18 MMIC "SOT 89" marking	PDF
MCH18 Abstract: SXA-389B xa3b EL115 Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular	Original	SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 MCH18 xa3b EL115	PDF
xa3b Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent	Original	SXA-389B SXA-389BZ MPO-100136 016REF 118REF 041REF 015TYP SXA-389B EDS-102915 xa3b	PDF
XA2 MMIC Abstract: MPO-100136 TOP MARKING C1 ROHM lot No Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No	PDF
marking xt2 mmic Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89 Contextual Info: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth	Original	SXT-289 SXT-289 016REF 118REF 041REF EDS-101157 marking xt2 mmic MCH18 MCR03 267M3502104 Sirenza amplifier SOT-89	PDF
267M3502104K Abstract: 2425-C Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with	Original	SXB-4089 SXB-4089 45propriate MPO-100136 016REF 118REF 041REF 015TYP EDS-103215 267M3502104K 2425-C	PDF
Xa3 TRANSISTOR Abstract: matsuo Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-389 SXA-389 016REF 118REF 041REF EDS-102231 Xa3 TRANSISTOR matsuo	PDF

Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable	Original	SXA-389 SXA-389 016REF 118REF 041REF EDS-102231	PDF