0402HP Search Results

Contextual Info: Document 526 -1 Chip Inductors - 0402HP Series 1005 •฀Higher฀Q฀and฀lower฀DCR฀than฀other฀0402฀inductors •฀Very฀high฀SRF฀values฀–฀as฀high฀as฀16฀GHz •฀

Contextual Info: Document 526 -1 Chip Inductors - 0402HP Series 1005 • Higher Q and lower DCR than other 0402 inductors • Very high SRF values – as high as 16 GHz • Excellent current handling capability – up to 2300 mA • 52 inductance values from 1.0 to 220 nH

TRANSISTOR SMD K23

Abstract: B DIN 5463
Contextual Info: User's Guide SLAU296 – October 2009 ADS54RF63-ADX4 Single-channel, 12-bit, 2.2 GSPS Evaluation Module EVM 1 2 3 4 5 6 7 8 9 10 Contents Introduction . 2

Contextual Info: DATA SHEET SKY67150-396LF: 300 to 2200 MHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  UHF and L-band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C

Contextual Info: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C

RRUS 32

Contextual Info: DATA SHEET SKY67151-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C

Contextual Info: AN727 Si4012 A NTENNA I NTERFACE AND M ATCHING N ETWORK G UIDE 1. Introduction This document provides guidelines and design examples for the high impedance matching networks necessary for the proper usage of the Si4012 transmitter. Section “2. High Impedance Differential Power Amplifier” gives a brief overview of the differential high impedance

Contextual Info: PROPOSED RFLA3022 RFLA3022 Low Noise, High Linearity Amplifier 1500MHz to 3000MHz RFMD’s RFLA3022 is a Low Noise, High Linearity Amplifier housed in a 2.0mm x 2.0mm DFN package. The VBIAS pin can be used to adjust bias current of the LNA. Noise figure of 0.45dB and

Contextual Info: V ishay I n tertech n o l o g y, I n c . Resistors - AEC-Q200 Qualified, High Power Design I INNOVAT AND TEC O L OGY CRCW-HP e3 Series N HN THICK FILM RESISTORS O 19 62-2012 Pulse-Proof, High-Power Thick Film Chip Resistors Key Benefits • Combines high power ratings with small case sizes: CRCW0603-HP is rated

20020

Contextual Info: CRCW-HP e3 Vishay Draloric Pulse Proof, High Power Thick Film Chip Resistors FEATURES • • • • • Excellent pulse load capability Enhanced power rating Double side printed resistor element Protective overglaze Pure tin solder contacts on Ni barrier layer

LTC5569

Abstract: LTC5583
Contextual Info: LTC5569 300MHz to 4GHz 3.3V Dual Active Downconverting Mixer FEATURES n n n n n n n n n n n n DESCRIPTION High IIP3: 26.8dBm at 1950MHz 2dB Conversion Gain Low Noise Figure: 11.7dB at 1950MHz 17dB NF Under 5dBm Blocking 44dB Channel Isolation Low Power: 3.3V/600mW Total

Contextual Info: 5 4 3 2 1 REVISION HISTORY ECO REV _ DESCRIPTION REBUILD WITH CHANGE 1 3.3V APPROVED DATE MICHEL A. 12-09-11 J6 3.3V D CP 2700pF 0603 C1 1uF 16V 0805 RZ 453 1% 0603 CI1 0.022uF C2 + 330uF 10V 7343 J7 D GND 0603 CI2 6800pF C7 0.01uF C6 470pF R1 51.1 1% 2 23

GJM1555C1H180GB01

Abstract: GRM1555C1H180JA01 C11 inductor RC0402FR-07-1K2RL RO4350B Rogers RO4350B microstrip phemt .s2p 25c2625
Contextual Info: Document Number: MML20242H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

JAPANESE TRANSISTOR DATA BOOK 2010

Abstract: Si443x Tanking Group AN427 AN436 SC-10 Si4431 Class-E Power Amplifiers class-e power amplify
Contextual Info: AN436 Si4030/4031/4430/4431 PA M A TC H ING 1. Introduction This application note provides a description of the matching of the power amplifier PA on the Si4030/4031/4430/4431 family of RFICs. (As these chips do not differ in the design and functionality of the PA, the

RR1608

Abstract: RR1005 RR2012 RR3216
Contextual Info: CRCW-HP e3 Vishay Draloric Pulse Proof, High Power Thick Film Chip Resistors FEATURES • • • • • Excellent pulse load capability Enhanced power rating Double side printed resistor element Protective overglaze Pure tin solder contacts on Ni barrier layer

LTC5569

Abstract: LTC5541 LT5554 LTC5551 LTC5510 LTC5583 LTC5577
Contextual Info: LTC5577 300MHz to 6GHz High Signal Level Active Downconverting Mixer Features Description +30dBm IIP3 +15dBm Input P1dB n 0dB Conversion Gain n Wideband Differential IF Output n Very Low 2 x 2 and 3 × 3 Spurs n IF Frequency Range Up to 1.5GHz n Low LO-RF Leakage

Contextual Info: AN648 Si4063/Si4463/64 TX M ATCHING 1. Introduction This application note describes the matching methods for the TX Power Amplifier PA on the Si4063/Si4463/64 RFICs. This document does not address the matching procedure for the PA on the Si4060/Si4460/61 RFICs. Since

Contextual Info: AN727 Si4012 A NTENNA I NTERFACE AND M ATCHING N ETWORK G UIDE 1. Introduction This document provides guidelines and design examples for the high impedance matching networks necessary for the proper usage of the Si4012 transmitter. Section “2. High Impedance Differential Power Amplifier” gives a brief overview of the differential high impedance

analog frequency multiplier

Contextual Info: Prelim inary Analog Frequency Multiplier PL565-78 for 491.52 MHz Wireless Base Station VCXO Family PRODUCT DESCRIPTION FEATURES The Analog Frequency Multiplier (AFM) is the industry’s first ‘Balanced Oscillator’ utilizing analog multiplication of the fundamental frequency (at

SI4010

Abstract: AN369 antenna 868MHZ planar 868 printed antenna design printed antenna 868 transistor smd zy antenna balun RF pcb antenna 434 4010-DAPB four arm spiral antenna
Contextual Info: AN369 Si4 01 0 A N T E N N A I N T E R F A C E GUIDE AND MATCHING NETWORK 1. Introduction This document provides guidelines and design examples for the high impedance matching networks and loop antennas necessary for the proper usage of the Si4010 transmitter.

Contextual Info: MAGX-000040-00500P GaN Wideband 5 W Pulsed Transistor in Plastic Package DC - 4.0 GHz Features •           Rev. V1 Functional Schematic GaN on SiC D-Mode Transistor Technology Common-Source Configuration Unmatched, Coupled DC and RF

RK73B1ETTD391J

Abstract: marking 8807 dec 5609 MGA-43328 mga43328
Contextual Info: MGA-43328 2.5–2.7 GHz 29dBm High Linearity Wireless Data Power Amplifier Data Sheet Description Features Avago Technologies’ MGA-43328 is a power amplifier for use in the (2.5-2.7)GHz band. High linear output power at 5V is achieved through the use of Avago Technologies’

Contextual Info: Document Number: MML20242H Rev. 0, 10/2012 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E-pHEMT MML20242HT1 Low Noise Amplifier The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

Contextual Info: DATA SHEET SKY67153-396LF: 0.7 to 3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, HSDPA macro and micro base stations  L and S band ultra low-noise receivers  Cellular repeaters, DAS and RRH/RRUs  High temperature transceiver applications to +105 °C