VSE004N04MS
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40V/48A N-Channel Advanced Power MOSFET with RDS(on) of 4 mΩ at VGS=10V, available in PDFN3333 package, designed for high-efficiency power applications. |
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VSD003N04MS-G
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40V/58A N-Channel Advanced Power MOSFET with 3 mΩ RDS(on) at VGS=10V, TO-252 package, designed for low conduction and switching losses, featuring high avalanche energy rating and optimized gate charge. |
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VSE003N04MSC-G
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VANGUARD
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40V/100A N-Channel Advanced Power MOSFET with typical RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and 100% avalanche testing capability. |
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VSE003N04MS-G
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40V/112A N-Channel Advanced Power MOSFET with low RDS(on) of 1.6 mΩ at VGS=10V, available in PDFN3333 package, designed for high efficiency power applications. |
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VSD007N04MS-G
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40V/90A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.6 mOhm at VGS=10V, TO-252 package, designed for high efficiency and fast switching applications. |
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VSP003N04MST-G
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40V/150A N-Channel Advanced Power MOSFET with 1.8 mΩ typical RDS(on) at VGS=10V, PDFN5x6 package, silicon limited ID of 232A, and 202W power dissipation capability. |
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VSO007N04MS-G
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40V/22A N-Channel Advanced Power MOSFET with RDSon 3.7 mΩ at VGS=10V, SOP8 package, suitable for high-efficiency switching applications. |
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VSP007N04MS-G
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40V, 80A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.4 mOhm at VGS=10V and 5.1 mOhm at VGS=4.5V, available in PDFN5x6 package. |
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VSE007N04MS-G
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40V/75A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.2 mOhm at VGS=10V and 4.9 mOhm at VGS=4.5V, available in PDFN3333 package. |
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VSP003N04MS-G
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VANGUARD
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40V/110A N-Channel Advanced Power MOSFET with RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN5x6 package, featuring low on-resistance and high avalanche energy rating. |
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VSE004N04MS
