AKP040N85
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP040N85 with 85V VDS, 140A ID, 3.5mΩ RDS(on) (TO-220), 3.3mΩ RDS(on) (TO-263), suitable for high-frequency switching and synchronous rectification applications. |
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10MQ040NPBF
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode 10MQ040NPBF to 10MQ060NPBF with 2.1A average rectified current, 40V to 60V DC blocking voltage, low forward voltage of 0.56V at 1.0A, and operating junction temperature from -65 to +125°C. |
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AKP040N10
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AK Semiconductor
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N-Channel Super Trench II Power MOSFET AKP040N10 with 100V drain-source voltage, 130A continuous drain current, typical RDS(on) of 3.7mΩ at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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AKP040N12
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AK Semiconductor
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N-channel Super Trench II Power MOSFET with 120V drain-source voltage, 150A continuous drain current, 3.3mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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MUR1040NS
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Microdiode Semiconductor
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400 V, 280 V, 10.0 A, 120 A, 85 pF, 50 °C/W, 35 ns. |
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15MQ040NPBF
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode 15MQ030NPBF with 3.0A average rectified current, 30V to 60V peak repetitive reverse voltage, SMA (DO-214AC) package, operating junction temperature from -65 to +125°C. |
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JMTQ040N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.0mΩ at VGS=10V and 6.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. |
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JMTG040N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 5.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested, in PDFN5x6-8L package. |
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AKP040N85
