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    04/0N Search Results

    04/0N Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge 10MQ040NPBF
    SUNMATE electronic Co., LTD Surface mount Schottky barrier diode 10MQ040NPBF to 10MQ060NPBF with 2.1A average rectified current, 40V to 60V DC blocking voltage, low forward voltage of 0.56V at 1.0A, and operating junction temperature from -65 to +125°C. Original PDF
    badge AKP040N85
    AK Semiconductor N-Channel Super Trench II Power MOSFET AKP040N85 with 85V VDS, 140A ID, 3.5mΩ RDS(on) (TO-220), 3.3mΩ RDS(on) (TO-263), suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge JMTQ040N03A
    Jiangsu JieJie Microelectronics Co Ltd 30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.0mΩ at VGS=10V and 6.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. Original PDF
    badge 15MQ040NPBF
    SUNMATE electronic Co., LTD Surface mount Schottky barrier diode 15MQ030NPBF with 3.0A average rectified current, 30V to 60V peak repetitive reverse voltage, SMA (DO-214AC) package, operating junction temperature from -65 to +125°C. Original PDF
    badge AKP040N12
    AK Semiconductor N-channel Super Trench II Power MOSFET with 120V drain-source voltage, 150A continuous drain current, 3.3mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP040N10
    AK Semiconductor N-Channel Super Trench II Power MOSFET AKP040N10 with 100V drain-source voltage, 130A continuous drain current, typical RDS(on) of 3.7mΩ at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge MUR1040NS
    Microdiode Semiconductor (MDD) 400 V, 280 V, 10.0 A, 120 A, 85 pF, 50 °C/W, 35 ns. Original PDF
    badge JMTG040N03A
    Jiangsu JieJie Microelectronics Co Ltd 30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 5.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested, in PDFN5x6-8L package. Original PDF
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    04/0N Price and Stock

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    Essentra Components 50M020040N004B

    PAN SLOTTED SCREW, M2 X .4 THREA
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    DigiKey 50M020040N004B Bag 1,000 1
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    DB Roberts 50M020040N004B
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    KORATECH 040N0030A07220303N0001

    40N*30mm*0.5P*(2/2/3/3)*P7
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    DigiKey 040N0030A07220303N0001 Bulk 500 10
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    KORATECH 040N0080A07440606N0008

    40N*80mm*0.5P*(4/4/6/6)*P7
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    DigiKey 040N0080A07440606N0008 Bulk 500 10
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    KORATECH 040N0083A07440808N0001

    40N*83mm*0.5P*(4/4/8/8)*P7
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    DigiKey 040N0083A07440808N0001 Bulk 500 10
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    KORATECH 040N0150A07440808N0002

    40N*150mm*0.5P*(4/4/8/8)*P7
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    DigiKey 040N0150A07440808N0002 Bulk 500 10
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