04/0N Search Results
04/0N Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
10MQ040NPBF
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SUNMATE electronic Co., LTD | Surface mount Schottky barrier diode 10MQ040NPBF to 10MQ060NPBF with 2.1A average rectified current, 40V to 60V DC blocking voltage, low forward voltage of 0.56V at 1.0A, and operating junction temperature from -65 to +125°C. | Original | ||||
AKP040N85
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP040N85 with 85V VDS, 140A ID, 3.5mΩ RDS(on) (TO-220), 3.3mΩ RDS(on) (TO-263), suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
AKP040N10
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AK Semiconductor | N-Channel Super Trench II Power MOSFET AKP040N10 with 100V drain-source voltage, 130A continuous drain current, typical RDS(on) of 3.7mΩ at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
AKP040N12
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AK Semiconductor | N-channel Super Trench II Power MOSFET with 120V drain-source voltage, 150A continuous drain current, 3.3mΩ typical RDS(on) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
MUR1040NS
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Microdiode Semiconductor (MDD) | 400 V, 280 V, 10.0 A, 120 A, 85 pF, 50 °C/W, 35 ns. | Original | ||||
JMTQ040N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 60A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.0mΩ at VGS=10V and 6.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. | Original | ||||
15MQ040NPBF
|
SUNMATE electronic Co., LTD | Surface mount Schottky barrier diode 15MQ030NPBF with 3.0A average rectified current, 30V to 60V peak repetitive reverse voltage, SMA (DO-214AC) package, operating junction temperature from -65 to +125°C. | Original | ||||
JMTG040N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 5.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and 100% UIS tested, in PDFN5x6-8L package. | Original |
04/0N Price and Stock
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Infineon Technologies AG BSZ040N06LS5ATMA1MOSFET N-CH 60V 101A TSDSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ040N06LS5ATMA1 | Tape & Reel | 25,000 | 5,000 |
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BSZ040N06LS5ATMA1 | Tape & Reel | 10,000 | 52 Weeks | 5,000 |
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BSZ040N06LS5ATMA1 | Cut Tape | 5,539 | 5 |
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BSZ040N06LS5ATMA1 | Bulk | 5 | 3 Weeks | 1 |
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BSZ040N06LS5ATMA1 | 191,349 | 1 |
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BSZ040N06LS5ATMA1 | 5,000 |
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BSZ040N06LS5ATMA1 | 53 Weeks | 5,000 |
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BSZ040N06LS5ATMA1 | 27,850 |
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onsemi NVLJWD040N06CLTAGMOSFET 2N-CH 60V 5.5A 6WDFNW |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVLJWD040N06CLTAG | Cut Tape | 4,369 | 1 |
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| NVLJWD040N06CLTAG | Digi-Reel | 4,369 | 1 |
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| NVLJWD040N06CLTAG | Tape & Reel | 3,000 | 3,000 |
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NVLJWD040N06CLTAG | 1 |
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NVLJWD040N06CLTAG | 41 Weeks | 3,000 |
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NVLJWD040N06CLTAG | 9,000 |
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NVLJWD040N06CLTAG |
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Tai-Tech Advanced Electronics Co Ltd HPC-5040NV-2R2MFIXED IND 2.2UH 3.8A 21 MOHM SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HPC-5040NV-2R2M | Digi-Reel | 2,737 | 1 |
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| HPC-5040NV-2R2M | Cut Tape | 2,737 | 1 |
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| HPC-5040NV-2R2M | Tape & Reel | 1,500 | 1,500 |
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KEMET Corporation R463N333040N0MCAP FILM 0.33UF 20% 630VDC RAD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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R463N333040N0M | Bulk | 1,298 | 1 |
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R463N333040N0M | Bulk | 19 Weeks | 500 |
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R463N333040N0M | 3,500 | 38 Weeks | 500 |
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Essentra Components 50M020040N008BPAN SLOTTED SCREW, M2 X .4 THREA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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50M020040N008B | Bag | 1,000 | 1 |
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