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    NXP Semiconductors AFT21H350W03SR6

    Bipolar Junction Transistor Arrays - Bjt; |NXP Semiconductors AFT21H350W03SR6
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    Newark AFT21H350W03SR6 Bulk 150
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    Rochester Electronics AFT21H350W03SR6 450 1
    • 1 $160.66
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    Vyrian AFT21H350W03SR6 500
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    NXP Semiconductors AFT09H310-03SR6

    Airfast Rf Power Ldmos Transistor, 920-9; |NXP Semiconductors AFT09H310-03SR6
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    Newark AFT09H310-03SR6 Bulk 150
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    Rochester Electronics AFT09H310-03SR6 304 1
    • 1 $148.91
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    Vyrian AFT09H310-03SR6 3,800
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    Freescale Semiconductor AFT09H310-03SR6

    Trans RF MOSFET N-CH 70V 5-Pin NI-1230S T/R
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    Bristol Electronics AFT09H310-03SR6 894
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    NXP Semiconductors ATF09H310-03SR6

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    Bristol Electronics ATF09H310-03SR6 850
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    NXP Semiconductors AFT26H250W03SR6

    Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
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    Bristol Electronics AFT26H250W03SR6 2
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    Vyrian AFT26H250W03SR6 1,800
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    03SR6 Datasheets Context Search

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    J239

    Contextual Info: Document Number: AFT09H310−03S Rev. 1, 9/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 56 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of


    Original     		aft09h31003sr604gsr6j239 PDF